Probing lattice dynamics in ST12 phase germanium nanowires by Raman spectroscopy

dc.contributor.authorRaha, Sreyan
dc.contributor.authorSrivastava, Divya
dc.contributor.authorBiswas, Subhajit
dc.contributor.authorGarcia-Gil, Adrià
dc.contributor.authorKarttunen, Antii J.
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorSingha, Achintya
dc.contributor.funderScience and Engineering Research Boarden
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderCSC – IT Center for Scienceen
dc.date.accessioned2022-01-10T12:32:42Z
dc.date.available2022-01-10T12:32:42Z
dc.date.issued2021-12-08
dc.date.updated2022-01-07T12:20:42Z
dc.description.abstractGermanium (Ge) plays a crucial role in setting up important functionalities for silicon-compatible photonics. Diamond cubic germanium is an extensively studied semiconductor, although its other exotic forms, like BC8, ST8, ST12 phases, may possess distinct electronic properties. We have fabricated stable ST12-Ge nanowires via a self-seeded bottom-up three phase growth in a confined supercritical toluene environment. Here, we report on the direct evidence of the presence of the ST12 phase by a combination of Raman spectroscopy and first-principles calculations using density functional theory (DFT). It is important to remark that the DFT calculation predicts all the Raman active optical phonon modes of the P 4321 structure, and it is in very good agreement with the experimental results. The phonon dynamics as a function of temperature is investigated through Raman measurements at temperatures varying from 80 to 300 K. First-order temperature coefficients for all the observed Raman modes are estimated from the linear temperature dependence of the phonon shifts. A complete set of isobaric Grüneisen parameters is reported for all Raman modes of ST12-Ge nanowire, and the values are lower compared to the same for Si, dc-Ge bulk, and Ge nanowire. These results have important implications for understanding thermal properties of ST12-Ge nanowire.en
dc.description.sponsorshipScience and Engineering Research Board (SERB), India (File No. EMR/2017/002107); CSC, Finland (the Finnish IT Center for Science, computational resources)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid232105en
dc.identifier.citationRaha, S., Srivastava, D., Biswas, S., Garcia-Gil, A., Karttunen, A. J., Holmes, J. D. and Singha, A. (2021) 'Probing lattice dynamics in ST12 phase germanium nanowires by Raman spectroscopy', Applied Physics Letters, 119, (7 pp). doi: 10.1063/5.0066744en
dc.identifier.doi10.1063/5.0066744en
dc.identifier.endpage7en
dc.identifier.issn0003-6951
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/12376
dc.identifier.volume119en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/en
dc.relation.urihttps://aip.scitation.org/doi/10.1063/5.0066744
dc.rightsPublished under an exclusive license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 119, 232105 (2021) and may be found at https://doi.org/10.1063/5.0066744en
dc.subjectIn-situ integrationen
dc.subjectDensity of statesen
dc.subjectHigh pressureen
dc.subjectAmorphous siliconen
dc.subjectCrystal structureen
dc.subjectGeen
dc.subjectAnodesen
dc.subjectTransitionsen
dc.subjectNanocrystalsen
dc.subjectParametersen
dc.subjectFirst-principle calculationsen
dc.subjectPolymorphismen
dc.subjectNanowiresen
dc.subjectLattice dynamicsen
dc.subjectGermaniumen
dc.subjectRaman spectroscopyen
dc.subjectDensity functional theoryen
dc.titleProbing lattice dynamics in ST12 phase germanium nanowires by Raman spectroscopyen
dc.typeArticle (peer-reviewed)en
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