AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

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dc.check.date2020-04-29
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorAlyamani, Ahmed
dc.contributor.authorLutsenko, Evgenii V.
dc.contributor.authorRzheutski, Mikalai V.
dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorVainilovich, Aliaksei G.
dc.contributor.authorSvitsiankou, Illia E.
dc.contributor.authorShulenkova, Varvara A.
dc.contributor.authorYablonskii, Gennadii P.
dc.contributor.authorPetrov, Stanislav I.
dc.contributor.authorAlexeev, Alexey N.
dc.contributor.funderKing Abdulaziz City for Science and Technologyen
dc.contributor.funderInstitute of Physicsen
dc.contributor.funderNational Academy of Sciences of Belarusen
dc.date.accessioned2019-09-06T10:58:37Z
dc.date.available2019-09-06T10:58:37Z
dc.date.issued2019-04-29
dc.date.updated2019-09-06T09:06:07Z
dc.description.abstractThe structural properties and surface morphology of AlN epitaxial layers grown by ammonia (NH3) and plasma-assisted (PA) molecular beam epitaxy (MBE) at different growth conditions on (0001) sapphire were investigated. The lowest RMS roughness of ~0.7 nm was achieved for the sample grown by NH3 MBE at a substrate temperature of 1085 °C and NH3 flow of 100 standard cm3 min−1. Atomic force microscopy measurements demonstrated a terrace-monolayer step-like surface morphology. Furthermore, the optimal substrate temperature for growth of GaN and AlGaN layers was determined from analysis of the GaN thermal decomposition rate. Using the optimized growth conditions, high electron mobility transistor heterostructures were grown by NH3 MBE on different types of AlN nucleation layer deposited by NH3 MBE or PA MBE. The grown heterostructures demonstrated comparable two-dimensional electron gas (2DEG) properties. The maximum 2DEG mobility of ~2000 cm2 V–1 s–1) at a 2DEG density of ~1.17 × 1013 cm−2 was achieved for the heterostructure with a PA MBE-grown AlN nucleation layer. The obtained results demonstrate the possibility of successful combination of different epitaxial approaches within a single growth process, which will contribute to the development of a new type of hybrid epitaxy that exploits the advantages of several technologies.en
dc.description.sponsorshipNational Academy of Sciences of Belarus (State Programs of Scientific Research of Belarus “Photonics, opto- and microelectronics” 2.1.01; 2.1.04; Union State Scientific Program 5.3 Luch (Contract No. 618)); Institute of Physics and King Abdulaziz City for Science and Technology (Agreement No. KACST-SIPH/2-2)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleidSC1010en
dc.identifier.citationAlyamani, A., Lutsenko, E. V., Rzheutski, M. V., Zubialevich, V. Z., Vainilovich, A. G., Svitsiankou, I. E., Shulenkova, V. A., Yablonskii, G. P., Petrov, S. I. and Alexeev, A. N. (2019) 'AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy', Japanese Journal of Applied Physics, 58(SC), SC1010 (5pp). doi: 10.7567/1347-4065/ab06b4en
dc.identifier.doi10.7567/1347-4065/ab06b4en
dc.identifier.eissn1347-4065
dc.identifier.endpage5en
dc.identifier.issn0021-4922
dc.identifier.issuedSCen
dc.identifier.journaltitleJapanese Journal of Applied Physicsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/8461
dc.identifier.volume58en
dc.language.isoenen
dc.publisherIOP Publishingen
dc.rights© 2019, The Japan Society of Applied Physics. This Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/en
dc.subjectHybrid epitaxyen
dc.subjectSurface morphologyen
dc.subjectSubstrate temperatureen
dc.titleAlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxyen
dc.typeArticle (peer-reviewed)en
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