The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization

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dc.contributor.authorDuffy, Ray
dc.contributor.authorShayesteh, Maryam
dc.contributor.authorWhite, Mary
dc.contributor.authorKearney, John
dc.contributor.authorKelleher, Anne-Marie
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T11:22:08Z
dc.date.available2017-07-28T11:22:08Z
dc.date.issued2010
dc.description.abstractDesign and optimization of n-type doped regions in germanium by solid phase epitaxial recrystallization (SPER) have been studied by the authors. A systematic study is presented of process variables that influence activation and thermal stability, including preamorphization, coimplants, recrystallization temperature, and postrecrystallization thermal treatments. Unlike silicon, activation after recrystallization in germanium is not optimum where the postrecrystallization thermal budget is kept to a minimum. With the aid of modeling, a maximum peak activation of 7 X 10(19) cm(-3) was extracted. A steady increase in sheet resistance during postrecrystallization anneals confirms the formation of metastable activation by SPER. It is predicted that active concentrations of 6-8 X 10(19) cm(-3) are sufficient to meet targets for sub-20 nm technologies. (C) 2010 American Institute of Physics. (doi: 10.1063/1.3452345)en
dc.description.sponsorshipScience Foundation Ireland (Research Grant No. 09/SIRG/I1623)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid231909
dc.identifier.citationDuffy, R., Shayesteh, M., White, M., Kearney, J. and Kelleher, A.-M. (2010) 'The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization', Applied Physics Letters, 96(23), pp. 231909. doi: 10.1063/1.3452345en
dc.identifier.doi10.1063/1.3452345
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued23
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4340
dc.identifier.volume96
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3452345
dc.rights© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Duffy, R., Shayesteh, M., White, M., Kearney, J. and Kelleher, A.-M. (2010) 'The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization', Applied Physics Letters, 96(23), pp. 231909 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3452345en
dc.subjectUltrashallow junctionsen
dc.subjectShallow junctionen
dc.subjectImplantationen
dc.subjectDiffusionen
dc.subjectDeactivationen
dc.subjectPhosphorusen
dc.subjectActivationen
dc.subjectMechanismen
dc.subjectDefectsen
dc.subjectSiliconen
dc.subjectGermaniumen
dc.subjectElemental semiconductorsen
dc.subjectAnnealingen
dc.subjectDopingen
dc.subjectRecrystallizationen
dc.titleThe formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallizationen
dc.typeArticle (peer-reviewed)en
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