Harvesting electromagnetic energy in the V-band using a rectenna formed by a bow tie integrated with a 6-nm-thick Au/HfO2/Pt metal-insulator-metal diode

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dc.contributor.authorAldrigo, Martino
dc.contributor.authorDragoman, Mircea
dc.contributor.authorModreanu, Mircea
dc.contributor.authorPovey, Ian M.
dc.contributor.authorIordanescu, Sergiu
dc.contributor.authorVasilache, Dan
dc.contributor.authorDinescu, Adrian
dc.contributor.authorShanawani, Mazen
dc.contributor.authorMasotti, Diego
dc.contributor.funderHorizon 2020en
dc.date.accessioned2020-03-11T15:56:14Z
dc.date.available2020-03-11T15:56:14Z
dc.date.issued2018-05-22
dc.date.updated2020-03-11T15:44:01Z
dc.description.abstractIn this paper, the first demonstration of a bow-tie antenna integrated with a metal-insulator-metal (MIM) diode for electromagnetic energy harvesting in the V-band (i.e., 40-75 GHz) is presented. We have designed, simulated, fabricated, and fully characterized a 60-GHz rectifying antenna (rectenna) based on a vertical Au-HfO2-PtMIM diode with reduced differential resistance. The dielectric used for the MIM structure is a 6-nm-thick amorphous HfO2 grown by atomic layer deposition. For the fabricated MIM device, we report here a current density of 3 x 10(4) A/cm(2) that exceeds the previous values presented in the literature. The vertical MIM-based rectenna is able to efficiently harvest up to 250 mu V from an impinging modulated millimeter-wave signal with -20 dBm of available power, thus offering a voltage responsivity of over 5 V/W. The reported results indicate that the proposed approach is well suited for future low-power solutions much sought after for the energetically autonomous 5G terminal equipment.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationAldrigo, M., Dragoman, M., Modreanu, M., Povey, I., Iordanescu, S., Vasilache, D., Dinescu, A., Shanawani, M. and Masotti, D. (2018) 'Harvesting Electromagnetic Energy in the V -Band Using a Rectenna Formed by a Bow Tie Integrated With a 6-nm-Thick Au/HfO2/Pt Metal–Insulator–Metal Diode', IEEE Transactions on Electron Devices, 65(7), pp. 2973-2980. doi: 10.1109/TED.2018.2835138en
dc.identifier.doi10.1109/TED.2018.2835138en
dc.identifier.endpage2980en
dc.identifier.issn0018-9383
dc.identifier.journaltitleIEEE Transactions On Electron Devicesen
dc.identifier.startpage2973en
dc.identifier.urihttps://hdl.handle.net/10468/9756
dc.identifier.volume65en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/654384/EU/Access to European Nanoelectronics Network/ASCENTen
dc.relation.urihttps://ieeexplore.ieee.org/document/8362794
dc.rights© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectDiodesen
dc.subjectEnergy harvestingen
dc.subjectMillimeter-wave (mm-wave) devicesen
dc.subjectRectennasen
dc.subjectHafnium compoundsen
dc.subjectMicrowave antennasen
dc.subjectElectromagneticsen
dc.subjectSchottky diodesen
dc.subjectEnergy harvestingen
dc.titleHarvesting electromagnetic energy in the V-band using a rectenna formed by a bow tie integrated with a 6-nm-thick Au/HfO2/Pt metal-insulator-metal diodeen
dc.typeArticle (peer-reviewed)en
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