Epitaxial growth of an antireflective, conductive, graded index ITO nanowire layer

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dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorSotomayor Torres, Clivia M.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderUniversity College Corken
dc.contributor.funderMinisterio de Economía y Competitividaden
dc.date.accessioned2018-05-17T14:47:31Z
dc.date.available2018-05-17T14:47:31Z
dc.date.issued2013-10-08
dc.date.updated2018-05-15T23:36:54Z
dc.description.abstractNanoporous and nanostructured films, assemblies and arrangements are important from an applied point of view in microelectronics, photonics and optical materials. The ability to minimize reflection, control light output and use contrast and variation of the refractive index to modify photonic characteristics can provide routes to enhanced photonic crystal devices, omnidirectional reflectors, antireflection coatings and broadband absorbing materials. This work shows how multiscale branching of defect-free ITO NWs grown as a layer with a graded refractive index improves antireflection properties and shifts the transparency window into the near-infrared (NIR). The measurements confirm the structural quality and growth mechanism of the NW layer without any heterogeneous seeding for NW growth. Optical reflectance measurements confirm broadband antireflection (reflection <5%) between 1.3 and 1.6 μm which is tunable with the NW density. The work also outlines how the suppression of the Burstein-Moss shifts using refractive index variation allows transparency in a conductive NW layer into NIR range.en
dc.description.sponsorshipUniversity College Cork (UCC Strategic Research Fund); Irish Research Council (New Foundations Award 2012); Ministerio de Economía y Competitividad (Spanish MINECO project TAPHOR)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationO'Dwyer, C. and Sotomayor Torres, C. (2013) 'Epitaxial growth of an antireflective, conductive, graded index ITO nanowire layer', Frontiers in Physics, 1:18 (8pp). doi: 10.3389/fphy.2013.00018en
dc.identifier.doi10.3389/fphy.2013.00018
dc.identifier.endpage18-8en
dc.identifier.issn2296-424X
dc.identifier.journaltitleFrontiers Of Physicsen
dc.identifier.startpage18-1en
dc.identifier.urihttps://hdl.handle.net/10468/6143
dc.identifier.volume1en
dc.language.isoenen
dc.publisherFrontiers Mediaen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Short Term Travel Fellowship (STTF)/07/SK/B1232a - STTF 11/IE/Optical Probing of Phase Changes in Inverse opal Photonic Crystal Li-on Battery Electrodes/en
dc.rights© 2013 O'Dwyer and Sotomayor Torres. This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) or licensor are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.en
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectNanowiresen
dc.subjectTransparencyen
dc.subjectConductivityen
dc.subjectIndium tin oxideen
dc.subjectAntireflectionen
dc.subjectRefractive indexen
dc.subjectThin film growthen
dc.subjectMBEen
dc.subjectOpticsen
dc.subjectPhotonicsen
dc.titleEpitaxial growth of an antireflective, conductive, graded index ITO nanowire layeren
dc.typeArticle (peer-reviewed)en
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