Air sensitivity of GaSe 2D material and its potential implications on device reliability

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dc.contributor.authorNeill, H.
dc.contributor.authorAnsari, L.
dc.contributor.authorPatil, V.
dc.contributor.authorO’Sullivan, S.
dc.contributor.authorRoycroft, B.
dc.contributor.authorPiletti, M.
dc.contributor.authorIacopino, D.
dc.contributor.authorHurley, P.K.
dc.contributor.authorGity, F.
dc.contributor.funderScience Foundation Ireland, SFI
dc.contributor.funderEuropean Research Executive Agency, REA
dc.contributor.funderIrish Centre for High-End Computing, ICHEC
dc.contributor.funderArtwork Unique RecognitiOn, 101094245-HORIZON-CL2-2022-HERITAGE-01-07
dc.contributor.funderEU-MSCA, 101153933
dc.contributor.funderIrish Research Council, EPSPG/2023/1772
dc.date.accessioned2026-05-13T12:00:01Z
dc.date.available2026-05-13T12:00:01Z
dc.date.issued2026-04-17
dc.description.abstractThis study demonstrates the oxidation-driven degradation of exfoliated GaSe highlighting the changes to not only the material’s morphology but its chemical composition as well. We have employed a number of simulation and experimental techniques, including DFT calculations, SEM, EDX and Raman spectroscopy, to understand the atomic structure and vacancy effects between the β and ε polytypes, and to understand the degradation occurring. The combined results of the DFT and experimental results show that the crystal used was the β polytype with a bandgap value of ~ 1.92 eV. Further experimental analysis demonstrates that the oxidation occurs on the surface of the material producing Ga2O3 which is possibly due to defect sites or dangling bonds. This oxidation encourages the formation of hemispherical blisters on the material surface. EDX analysis indicates that these blisters are Se-rich while Raman spectroscopy confirms the presence of amorphous and crystalline Se in these regions while also showing the disappearance of the dominant vibrational modes of GaSe. This work emphasises the importance of the environment’s role and developing encapsulation strategies in relation to interface engineering and material stability for fabricating air-stable nanoelectronic devices.en
dc.description.sponsorshipThis work was supported by the Research Ireland (formerly Science Foundation Ireland) AMBER Research Centre (SFI-12/RC/2278_P2). The SFI/HEA Irish Centre for High-End Computing (ICHEC) is acknowledged for the provision of computational facilities and support. H.N. and V.P. acknowledge funding through Irish Research Council (IRC) EPSPG/2023/1772 and EU-MSCA project 101153933, respectively. M.P. and D.I. acknowledge funding through the project Artwork Unique RecognitiOn and tRacking through chemicAl encoded data, miniaturized devices and blockchain alliance (AURORA)” and supported by Grant agreement no. 101094245 under the HORIZON-CL2-2022-HERITAGE-01-07 topic from the European Research Executive Agency.
dc.description.versionPublished Version
dc.format.extent12
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid126
dc.identifier.authororcidNeill, H.
dc.identifier.authororcidAnsari, L.§0000-0002-9284-2832
dc.identifier.authororcidPatil, V.
dc.identifier.authororcidO’Sullivan, S.
dc.identifier.authororcidRoycroft, B.
dc.identifier.authororcidPiletti, M.
dc.identifier.authororcidIacopino, D.§0000-0003-2301-9401
dc.identifier.authororcidHurley, P.K.
dc.identifier.authororcidGity, F.
dc.identifier.citationNeill, H, Ansari, L, Patil, V, O’Sullivan, S, Roycroft, B, Piletti, M, Iacopino, D, Hurley, P K & Gity, F 2026, 'Air sensitivity of GaSe 2D material and its potential implications on device reliability', Discov. Nano, vol. 21, no. 1, 126. https://doi.org/10.1186/s11671-026-04568-9
dc.identifier.doi10.1186/s11671-026-04568-9
dc.identifier.issn2731-9229
dc.identifier.issued1
dc.identifier.journaltitleDiscov. Nano
dc.identifier.otherRIS: urn:AEA7DF87766B35B5D66C01E429C18880
dc.identifier.otherORCID: /0000-0003-2301-9401/work/214602133
dc.identifier.otherORCID: /0000-0002-9284-2832/work/214602346
dc.identifier.urihttps://hdl.handle.net/10468/18752
dc.identifier.volume21
dc.language.isoen
dc.publisherSpringer
dc.relation.urihttps://www.scopus.com/pages/publications/105035903477
dc.relation.urihttps://www.scopus.com/pages/publications/105035903477?origin=resultslist
dc.rights© 2026, the Authors.
dc.rights.accessrightsopen access
dc.rights.licensenameAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.statusPeer reviewed
dc.subjectBand-gap values
dc.subjectChemical compositions
dc.subjectCrystal atomic structure
dc.subjectDFT calculation
dc.subjectDangling bonds
dc.subjectDevice reliability
dc.subjectExperimental techniques
dc.subjectGallium compounds
dc.subjectNanoelectronics
dc.subjectOxidation
dc.subjectPhase interfaces
dc.subjectPolytypes
dc.subjectRaman spectroscopy
dc.subjectReliability
dc.subjectSEM-EDX
dc.subjectSelenium compounds
dc.subjectSimulation technique
dc.subjectStructure effect
dc.subjectSurface defects
dc.subjectVacancy effects
dc.subject[Chemistry]
dc.subject[Tyndall]
dc.titleAir sensitivity of GaSe 2D material and its potential implications on device reliabilityen
dc.typeArticle (peer-reviewed)
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