Fabrication of ordered, large scale, horizontally aligned Si nanowire arrays based on an in-situ hard mask block copolymer approach

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dc.contributor.authorGhoshal, Tandra
dc.contributor.authorSenthamaraikannan, Ramsankar
dc.contributor.authorShaw, Matthew T.
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorMorris, Michael A.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderSemiconductor Research Corporationen
dc.date.accessioned2018-09-13T14:46:02Z
dc.date.available2018-09-13T14:46:02Z
dc.date.issued2013-11-26
dc.date.updated2018-08-07T12:55:51Z
dc.description.abstractA simple technique is demonstrated to fabricate horizontal, uniform, and hexagonally arranged Sinanowire arrays with controlled orientation and density at spatially well defined locations on a substrate based on an in situ hard-mask pattern-formation approach by microphase-separated block-copolymer thin films. The technique may have significant application in the manufacture of transistor circuitry.en
dc.description.sponsorshipScience Foundation Ireland through Semiconductor Research Corporation (2011-IN-2194 grant);en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationGhoshal, T., Senthamaraikannan, R., Shaw, M. T., Holmes, J. D. and Morris, M. A. (2014) 'Fabrication of Ordered, Large Scale, Horizontally-Aligned Si Nanowire Arrays Based on an In Situ Hard Mask Block Copolymer Approach', Advanced Materials, 26(8), pp. 1207-1216. doi: 10.1002/adma.201304096en
dc.identifier.doi10.1002/adma.201304096
dc.identifier.endpage1216en
dc.identifier.issn0935-9648
dc.identifier.issn1521-4095
dc.identifier.issued8en
dc.identifier.journaltitleAdvanced Materialsen
dc.identifier.startpage1207en
dc.identifier.urihttps://hdl.handle.net/10468/6779
dc.identifier.volume26en
dc.language.isoenen
dc.publisherWileyen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/09/SIRG/I1621/IE/Tuning surface and dopant properties of silicon and germanium nanowires for high performance nanowire-based field-effect transistors/en
dc.relation.urihttps://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201304096
dc.rights© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the peer reviewed version of the following article: Ghoshal, T. , Senthamaraikannan, R. , Shaw, M. T., Holmes, J. D. and Morris, M. A. (2014), Fabrication of Ordered, Large Scale, Horizontally‐Aligned Si Nanowire Arrays Based on an In Situ Hard Mask Block Copolymer Approach. Adv. Mater., 26: 1207-1216., which has been published in final form at https://doi.org/10.1002/adma.201304096. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.en
dc.subjectBlock copolymersen
dc.subjectNanowiresen
dc.subjectPatterningen
dc.subjectSiliconen
dc.subjectPhotoelectron spectroscopyen
dc.titleFabrication of ordered, large scale, horizontally aligned Si nanowire arrays based on an in-situ hard mask block copolymer approachen
dc.typeArticle (peer-reviewed)en
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