Analysis and optimisation of semiconductor reflective modulators for optical networks

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dc.check.embargoformatNot applicableen
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dc.check.opt-outNot applicableen
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dc.contributor.advisorTownsend, Paul D.en
dc.contributor.authorNaughton, Alan J.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderEuropean Commissionen
dc.date.accessioned2015-08-18T09:11:52Z
dc.date.available2015-08-18T09:11:52Z
dc.date.issued2014
dc.date.submitted2014
dc.description.abstractReflective modulators based on the combination of an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) are attractive devices for applications in long reach carrier distributed passive optical networks (PONs) due to the gain provided by the SOA and the high speed and low chirp modulation of the EAM. Integrated R-EAM-SOAs have experimentally shown two unexpected and unintuitive characteristics which are not observed in a single pass transmission SOA: the clamping of the output power of the device around a maximum value and low patterning distortion despite the SOA being in a regime of gain saturation. In this thesis a detailed analysis is carried out using both experimental measurements and modelling in order to understand these phenomena. For the first time it is shown that both the internal loss between SOA and R-EAM and the SOA gain play an integral role in the behaviour of gain saturated R-EAM-SOAs. Internal loss and SOA gain are also optimised for use in a carrier distributed PONs in order to access both the positive effect of output power clamping, and hence upstream dynamic range reduction, combined with low patterning operation of the SOA Reflective concepts are also gaining interest for metro transport networks and short reach, high bit rate, inter-datacentre links. Moving the optical carrier generation away from the transmitter also has potential advantages for these applications as it avoids the need for cooled photonics being placed directly on hot router line-cards. A detailed analysis is carried out in this thesis on a novel colourless reflective duobinary modulator, which would enable wavelength flexibility in a power-efficient reflective metro node.en
dc.description.sponsorshipScience Foundation Ireland (06/IN/1969 and 12/IA/1270); European Commission (EU projects: C3PO and PIEMAN)en
dc.description.statusNot peer revieweden
dc.description.versionAccepted Version
dc.format.mimetypeapplication/pdfen
dc.identifier.citationNaughton, A. J. 2014. Analysis and optimisation of semiconductor reflective modulators for optical networks. PhD Thesis, University College Cork.en
dc.identifier.endpage195
dc.identifier.urihttps://hdl.handle.net/10468/1919
dc.language.isoenen
dc.publisherUniversity College Corken
dc.rights© 2014, Alan J. Naughton.en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/en
dc.subjectElectro-absorption modulator (EAM)en
dc.subjectPassive optical network (PON)en
dc.subjectReflective modulatoren
dc.subjectSemiconductor optical amplifieren
dc.subjectDuobinaryen
dc.thesis.opt-outfalse
dc.titleAnalysis and optimisation of semiconductor reflective modulators for optical networksen
dc.typeDoctoral thesisen
dc.type.qualificationlevelDoctoralen
dc.type.qualificationnamePhD (Science)en
ucc.workflow.supervisorpaul.townsend@tyndall.ie
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