Atomic vapor deposition of bismuth titanate thin films

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dc.contributor.authorDeepak, Nitin
dc.contributor.authorZhang, Panfeng F.
dc.contributor.authorKeeney, Lynette
dc.contributor.authorPemble, Martyn E.
dc.contributor.authorWhatmore, Roger W.
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderInternational Centre for Graduate Education in Micro and Nano Engineering (ICGEE)en
dc.date.accessioned2016-07-22T14:40:29Z
dc.date.available2016-07-22T14:40:29Z
dc.date.issued2013-05-08
dc.date.updated2014-09-03T10:29:09Z
dc.description.abstractc-axis oriented ferroelectric bismuth titanate (Bi4Ti 3O12) thin films were grown on (001) strontium titanate (SrTiO3) substrates by an atomic vapor deposition technique. The ferroelectric properties of the thin films are greatly affected by the presence of various kinds of defects. Detailed x-ray diffraction data and transmission electron microscopy analysis demonstrated the presence of out-of-phase boundaries (OPBs). It is found that the OPB density changes appreciably with the amount of titanium injected during growth of the thin films. Piezo-responses of the thin films were measured by piezo-force microscopy. It is found that the in-plane piezoresponse is stronger than the out-of-plane response, due to the strong c-axis orientation of the films.en
dc.description.sponsorshipInternational Centre for Graduate Education in micro and nano Engineering (ICGEE), (Ph.D funding); Science Foundation Ireland (SFI FORME Strategic Research Cluster Award No. 07/SRC/I1172); Higher Education Authority (Program for Research in Third Level Institutions (2007-2011) via the INSPIRE program.)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid187207
dc.identifier.citationDeepak, N., Zhang, P. F., Keeney, L., Pemble, M. E. and Whatmore, R. W. (2013) 'Atomic vapor deposition of bismuth titanate thin films'. Journal of Applied Physics, 113, 187207. http://scitation.aip.org/content/aip/journal/jap/113/18/10.1063/1.4801985en
dc.identifier.doi10.1063/1.4801985
dc.identifier.endpage187207-7en
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage187207-1en
dc.identifier.urihttps://hdl.handle.net/10468/2931
dc.identifier.volume113en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rights© 2013 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in J. Appl. Phys. 113, 187207 (2013) and may be found at http://scitation.aip.org/content/aip/journal/jap/113/18/10.1063/1.4801985en
dc.subjectMicroscopyen
dc.subjectBi4Ti 3O12en
dc.subjectTransmission electron microscopyen
dc.subjectAtomic vapor depositionen
dc.subjectThin film growthen
dc.subjectBismuthen
dc.subjectTitaniumen
dc.subjectAtomic force microscopyen
dc.titleAtomic vapor deposition of bismuth titanate thin filmsen
dc.typeArticle (peer-reviewed)en
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