Energies of the X- and L-valleys in In0.53Ga0.47As from electronic structure calculations

dc.contributor.authorGreene-Diniz, Gabriel
dc.contributor.authorFischetti, Massimo V.
dc.contributor.authorGreer, James C.
dc.contributor.funderEuropean Commissionen
dc.contributor.funderSeventh Framework Programmeen
dc.date.accessioned2017-02-23T16:32:50Z
dc.date.available2017-02-23T16:32:50Z
dc.date.issued2016-02-05
dc.date.updated2017-02-23T16:15:48Z
dc.description.abstractSeveral theoretical electronic structure methods are applied to study the relative energies of the minima of the X- and L-conduction-band satellite valleys of InxGa1−xAs with x = 0.53. This III-V semiconductor is a contender as a replacement for silicon in high-performance n-type metal-oxide-semiconductor transistors. The energy of the low-lying valleys relative to the conduction-band edge governs the population of channel carriers as the transistor is brought into inversion, hence determining current drive and switching properties at gate voltages above threshold. The calculations indicate that the position of the L- and X-valley minima are ∼1 eV and ∼1.2 eV, respectively, higher in energy with respect to the conduction-band minimum at the Γ-point.en
dc.description.sponsorshipEuropean Commission (European Union project DEEPEN funded under NMR-2013-1.4-1 Grant Agreement No. 604416)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationGreene-Diniz, G., Fischetti, M. V. and Greer, J. C. (2016) 'Energies of the X- and L-valleys in In0.53Ga0.47As from electronic structure calculations', Journal of Applied Physics, 119(5), pp. 055707. doi:10.1063/1.4940740en
dc.identifier.doi10.1063/1.4940740
dc.identifier.endpage055707-6en
dc.identifier.issn0021-8979
dc.identifier.issued5en
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage055707-1en
dc.identifier.urihttps://hdl.handle.net/10468/3682
dc.identifier.volume119en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rights© 2016, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics 119, 055707 (2016) and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4940740en
dc.subjectConduction bandsen
dc.subjectDensity functional theoryen
dc.subjectGallium arsenideen
dc.subjectIII-V semiconductorsen
dc.subjectIndium compoundsen
dc.titleEnergies of the X- and L-valleys in In0.53Ga0.47As from electronic structure calculationsen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
2576.pdf
Size:
444.2 KB
Format:
Adobe Portable Document Format
Description:
Published Version
License bundle
Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description: