Characterisation of the electroless nickel deposit as a barrier layer/under bump metallurgy on IC metallisation

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dc.contributor.authorRohan, James F.
dc.contributor.authorO'Riordan, Gerard
dc.contributor.funderEnterprise Irelanden
dc.date.accessioned2019-03-13T16:46:19Z
dc.date.available2019-03-13T16:46:19Z
dc.date.issued2002-11-07
dc.date.updated2019-03-13T16:43:08Z
dc.description.abstractSelective electroless nickel–phosphorus deposits on integrated circuit (IC) metallisation such as copper and aluminium were characterised using differential scanning calorimetry (DSC), X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) for elemental analysis. Annealing the Ni–P deposits in nitrogen atmospheres at temperatures compatible with organic dielectrics for IC components, such as polyimide, was performed to characterise the deposits. The crystallisation behaviour of the electroless nickel deposits with different concentrations of co-deposited phosphorus was examined.en
dc.description.sponsorshipEnterprise Ireland (grant number HE-1999-262 from the Enterprise Ireland Applied Research Grant Scheme)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRohan, J. F. and O’Riordan, G. (2003) 'Characterisation of the electroless nickel deposit as a barrier layer/under bump metallurgy on IC metallisation', Microelectronic Engineering, 65(1), pp. 77-85. doi: 10.1016/S0167-9317(02)00730-Xen
dc.identifier.doi10.1016/S0167-9317(02)00730-X
dc.identifier.endpage85en
dc.identifier.issn0167-9317
dc.identifier.journaltitleMicroelectronic Engineeringen
dc.identifier.startpage77en
dc.identifier.urihttps://hdl.handle.net/10468/7622
dc.identifier.volume65en
dc.language.isoenen
dc.publisherElsevieren
dc.relation.urihttp://www.sciencedirect.com/science/article/pii/S016793170200730X
dc.rights© 2003 Elsevier B.V. All rights reserved. This manuscript version is made available under the CC-BY-NC-ND 4.0 licenseen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectElectrolessen
dc.subjectIC metallisationen
dc.subjectBarrieren
dc.subjectCrystallisationen
dc.subjectIntegrated circuitsen
dc.subjectElemental analysisen
dc.subjectAnnealingen
dc.subjectCrystallizationen
dc.subjectDielectric materialsen
dc.subjectDifferential scanning calorimetryen
dc.subjectElectroless platingen
dc.subjectEnergy dispersive spectroscopyen
dc.subjectNickel depositsen
dc.subjectPhosphate depositsen
dc.subjectPolyimidesen
dc.subjectScanning electron microscopyen
dc.subjectX ray diffractionen
dc.titleCharacterisation of the electroless nickel deposit as a barrier layer/under bump metallurgy on IC metallisationen
dc.typeArticle (peer-reviewed)en
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