Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors

Simple item page
dc.contributor.authorPark, Jong Tae
dc.contributor.authorKim, Jin Young
dc.contributor.authorColinge, Jean-Pierre
dc.contributor.funderIncheon National University
dc.date.accessioned2017-07-28T10:48:29Z
dc.date.available2017-07-28T10:48:29Z
dc.date.issued2012
dc.description.abstractNegative-bias-temperature-instability (NBTI) and hot-carrier induced device degradation have been experimentally compared between accumulation mode (AM) p-channel multigate transistors (pMuGFETs) and junctionless (JL) pMuGFET. NBTI degradation is less significant in junctionless pMuGFETs than AM pMuGFETs. The threshold voltage shift is less significant in junctionless transistors than AM transistors. The device simulation shows that the peak of lateral electric field and the impact ionization rate of AM device are larger than those of junctionless devices. (C) 2012 American Institute of Physics. (doi:10.1063/1.3688245)en
dc.description.sponsorshipUniversity of Incheon (International Cooperative Research Grant in 2011 (No. 2011-0127))en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid83504
dc.identifier.citationPark, J. T., Kim, J. Y. and Colinge, J. P. (2012) 'Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors', Applied Physics Letters, 100(8), pp. 083504. doi: 10.1063/1.3688245en
dc.identifier.doi10.1063/1.3688245
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued8
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4304
dc.identifier.volume100
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3688245
dc.rights© 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Park, J. T., Kim, J. Y. and Colinge, J. P. (2012) 'Negative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistors', Applied Physics Letters, 100(8), pp. 083504 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3688245en
dc.subjectMOSFETsen
dc.subjectHot carriersen
dc.subjectTransistorsen
dc.subjectSiliconen
dc.subjectElectric fieldsen
dc.titleNegative-bias-temperature-instability and hot carrier effects in nanowire junctionless p-channel multigate transistorsen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
3279.pdf
Size:
803.88 KB
Format:
Adobe Portable Document Format
Description:
Published Version
Download
Collections
Tyndall National Institute - Journal Articles