Complex emission dynamics of type-II GaSb/GaAs quantum dots

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dc.contributor.authorGradkowski, Kamil
dc.contributor.authorPavarelli, Nicola
dc.contributor.authorOchalski, Tomasz J.
dc.contributor.authorWilliams, David P.
dc.contributor.authorTatebayashi, Jun
dc.contributor.authorHuyet, Guillaume
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.authorHuffaker, Diana L.
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderAir Force Office of Scientific Research
dc.contributor.funderHigher Education Authority
dc.contributor.funderEuropean Commission
dc.date.accessioned2017-07-28T11:47:31Z
dc.date.available2017-07-28T11:47:31Z
dc.date.issued2009
dc.description.abstractOptical properties of the GaSb/GaAs quantum dot system are investigated using a time-resolved photoluminescence technique. In this type-II heterostructure the carriers of different species are spatially separated and, as a consequence, a smooth evolution of both the emission wavelength and decay timescale is observed. A wavelength shift of 170 nm is measured simultaneously with the progressive timescale change from 100 ps to 23 ns. These phenomena are explained by the evolution of the carrier density, which brings a modification to the optical transition probability as well as the shift in the emission toward the higher energies. (C) 2009 American Institute of Physics. (10.1063/1.3202419)en
dc.description.sponsorshipEuropean Commission (Marie Curie Actions Contract No. 041985); Science Foundation Ireland (Contract No. 06/RFP/ENE014); Air Force Office of Scientific Research (Contract No. FA9550-06-1-0407); Higher Education Authority (INSPIRE program, funded by the Irish Government’s Program for Research in Third Level Institutions, Cycle 4, National Development Plan 2007–20013.)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid61102
dc.identifier.citationGradkowski, K., Pavarelli, N., Ochalski, T. J., Williams, D. P., Tatebayashi, J., Huyet, G., O’Reilly, E. P. and Huffaker, D. L. (2009) 'Complex emission dynamics of type-II GaSb/GaAs quantum dots', Applied Physics Letters, 95(6), pp. 061102. doi: 10.1063/1.3202419en
dc.identifier.doi10.1063/1.3202419
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued6
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4356
dc.identifier.volume95
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Frontiers Programme (RFP)/06/RFP/ENE014/IE/Next Generation Quantum Dot Materials and Devices/
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3202419
dc.rights© 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gradkowski, K., Pavarelli, N., Ochalski, T. J., Williams, D. P., Tatebayashi, J., Huyet, G., O’Reilly, E. P. and Huffaker, D. L. (2009) 'Complex emission dynamics of type-II GaSb/GaAs quantum dots', Applied Physics Letters, 95(6), pp. 061102 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3202419en
dc.subjectAlloysen
dc.subjectCarrier densityen
dc.subjectGallium arsenideen
dc.subjectGallium compoundsen
dc.subjectIII-V semiconductorsen
dc.subjectPhotoluminescenceen
dc.subjectSemiconductor heterojunctionsen
dc.subjectSemiconductor quantum dotsen
dc.subjectTime resolved spectraen
dc.subjectQuantum dotsen
dc.subjectCarrier densityen
dc.subjectWave functionsen
dc.subjectQuantum wellsen
dc.titleComplex emission dynamics of type-II GaSb/GaAs quantum dotsen
dc.typeArticle (peer-reviewed)en
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