Multi-technique characterisation of MOVPE-grown GaAs on Si

Simple item page
dc.contributor.authorWong, Chiu Soon
dc.contributor.authorBennett, Nick S.
dc.contributor.authorMcNally, Patrick J.
dc.contributor.authorGaliana, B.
dc.contributor.authorTejedor, P.
dc.contributor.authorBenedicto, M.
dc.contributor.authorMolina-Aldareguia, J. M.
dc.contributor.authorMonaghan, Scott
dc.contributor.authorHurley, Paul K.
dc.contributor.authorCherkaoui, Karim
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderEnterprise Irelanden
dc.contributor.funderComunidad de Madriden
dc.contributor.funderMinisterio de Ciencia e Innovaciónen
dc.date.accessioned2022-06-29T12:02:58Z
dc.date.available2022-06-29T12:02:58Z
dc.date.issued2010-10-08
dc.date.updated2022-06-29T11:47:04Z
dc.description.abstractThe heterogeneous integration of III-V materials on a Si CMOS platform offers tremendous prospects for future high-speed and low-power logic applications. That said this integration generates immense scientific and technological challenges. In this work multi-technique characterisation is used to investigate properties of GaAs layers grown by Metal–Organic Vapour Phase Epitaxy (MOVPE) on Si substrates – (100) with 4° offset towards <1 1 0> – under various growth conditions. This being a crucial first step towards the production of III-V template layers with a relatively lower density of defects for selective epitaxial overgrowth of device quality material. The optical and structural properties of heteroepitaxial GaAs are first investigated by micro-Raman spectroscopy and photoluminescence and reflectance measurements. High-resolution X-ray diffraction (HR-XRD) is used to investigate structural properties. Advanced XRD techniques, including double-axis diffraction and X-ray crystallographic mapping are used to evaluate degrees of relaxation and distribution of the grain orientations in the epilayers, respectively. Results obtained from the different methodologies are compared in an attempt to understand growth kinetics of the materials system. The GaAs overlayer grown with annealing at 735 °C following As pre-deposition at 500 °C shows the best crystallinity. Close inspection confirms the growth of epitaxial GaAs preferentially oriented along (100) embedded in a highly textured polycrystalline structure.en
dc.description.sponsorshipSeventh Framework Programme (EU FP7 MATERA ERA-Net ‘ENGAGE’ project); Comunidad de Madrid (Fundación Madrimasd para el Conocimiento); Ministerio de Ciencia e Innovación (Grant No. TEC2007-66955)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationWong, C. S., Bennett, N. S., McNally, P. J., Galiana, B., Tejedor, P., Benedicto, M., Molina-Aldareguia, J. M., Monaghan, S., Hurley, P. K. and Cherkaoui, K. (2011) 'Multi-technique characterisation of MOVPE-grown GaAs on Si', Microelectronic Engineering, 88(4), pp. 472-475. doi: 10.1016/j.mee.2010.09.026en
dc.identifier.doi10.1016/j.mee.2010.09.026en
dc.identifier.endpage475en
dc.identifier.issn0167-9317
dc.identifier.issued4en
dc.identifier.journaltitleMicroelectronic Engineeringen
dc.identifier.startpage472en
dc.identifier.urihttps://hdl.handle.net/10468/13331
dc.identifier.volume88en
dc.language.isoenen
dc.publisherElsevier B.V.en
dc.rights© 2010, Elsevier B.V. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 license.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subjectMicro-Raman spectroscopy Photoluminescenceen
dc.subjectX-ray diffractionen
dc.subjectEpitaxialen
dc.subjectCrystallographic mappingen
dc.subject~Tyndall National Institute - Journal Articles~en
dc.titleMulti-technique characterisation of MOVPE-grown GaAs on Sien
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Wong_et_al..pdf
Size:
1.47 MB
Format:
Adobe Portable Document Format
Description:
Accepted Version
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Tyndall National Institute - Journal Articles