Isolating the photovoltaic junction: atomic layer deposited TiO2-RuO2 alloy Schottky contacts for silicon photoanodes

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dc.check.date2017-08-22
dc.check.infoAccess to this article is restricted until 12 months after publication by the request of the publisher.en
dc.contributor.authorHendricks, Olivia L.
dc.contributor.authorScheuermann, Andrew G.
dc.contributor.authorSchmidt, Michael
dc.contributor.authorHurley, Paul K.
dc.contributor.authorMcIntyre, Paul C.
dc.contributor.authorChidsey, Christopher E. D.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderNational Science Foundationen
dc.contributor.funderStanford Universityen
dc.contributor.funderHertz Foundationen
dc.date.accessioned2016-11-09T15:16:14Z
dc.date.available2016-11-09T15:16:14Z
dc.date.issued2016-08-22
dc.date.updated2016-11-09T15:05:12Z
dc.description.abstractWe synthesized nanoscale TiO2-RuO2 alloys by atomic layer deposition (ALD) that possess a high work function and are highly conductive. As such, they function as good Schottky contacts to extract photogenerated holes from n-type silicon while simultaneously interfacing with water oxidation catalysts. The ratio of TiO2 to RuO2 can be precisely controlled by the number of ALD cycles for each precursor. Increasing the composition above 16% Ru sets the electronic conductivity and the metal work function. No significant Ohmic loss for hole transport is measured as film thickness increases from 3 to 45 nm for alloy compositions >= 16% Ru. Silicon photoanodes with a 2 nm SiO2 layer that are coated by these alloy Schottky contacts having compositions in the range of 13-46% Ru exhibit average photovoltages of 525 mV, with a maximum photovoltage of 570 mV achieved. Depositing TiO2-RuO2 alloys on nSi sets a high effective work function for the Schottky junction with the semiconductor substrate, thus generating a large photovoltage that is isolated from the properties of an overlying oxygen evolution catalyst or protection layer.en
dc.description.sponsorshipScience Foundation Ireland (US-Ireland R&D Partnership Program—Grant Number SFI/13/US/12543); National Science Foundation (program CBET-1336844); Stanford University (Stanford Global Climate and Energy Project)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHendricks, Olivia L.; Scheuermann, Andrew G.; Schmidt, Michael; Hurley, Paul K.; McIntyre, Paul C.; Chidsey, Christopher E. D. (2016) 'Isolating the Photovoltaic Junction: Atomic Layer Deposited TiO2-RuO2 Alloy Schottky Contacts for Silicon Photoanodes'. ACS Applied Materials & Interfaces, 8 (36):23763-23773. doi: 10.1021/acsami.6b08558en
dc.identifier.doi10.1021/acsami.6b08558
dc.identifier.endpage23773en
dc.identifier.issn1944-8244
dc.identifier.issued36en
dc.identifier.journaltitleAcs Applied Materials & Interfacesen
dc.identifier.startpage23763en
dc.identifier.urihttps://hdl.handle.net/10468/3260
dc.identifier.volume8en
dc.language.isoenen
dc.publisherAmerican Chemical Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/NSF/Directorate for Engineering::Division of Chemical, Bioengineering, Environmental, and Transport Systems/1336844/US/Research into Emerging Nano-structured Electrodes for the splitting of Water (RENEW)/en
dc.relation.urihttp://pubs.acs.org/doi/abs/10.1021/acsami.6b08558
dc.rightsCopyright © 2016 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in American Chemical Society Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsami.6b08558en
dc.subjectRuthenium thin-filmsen
dc.subjectOpen-circuit voltageen
dc.subjectMIS solar-cellsen
dc.subjectWater oxidationen
dc.subjectOxygenen
dc.subjectOxideen
dc.subjectPerformanceen
dc.subjectElectrocatalysisen
dc.subjectPhotocatalysisen
dc.subjectElectrodesen
dc.titleIsolating the photovoltaic junction: atomic layer deposited TiO2-RuO2 alloy Schottky contacts for silicon photoanodesen
dc.typeArticle (peer-reviewed)en
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