Improvement of carrier ballisticity in junctionless nanowire transistors

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dc.contributor.authorAkhavan, Nima Dehdashti
dc.contributor.authorFerain, Isabelle
dc.contributor.authorRazavi, Pedram
dc.contributor.authorYu, Ran
dc.contributor.authorColinge, Jean-Pierre
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderSeventh Framework Programmeen
dc.date.accessioned2017-07-28T11:04:40Z
dc.date.available2017-07-28T11:04:40Z
dc.date.issued2011
dc.description.abstractIn this work we show that junctionless nanowire transistor (JNT) exhibits lower degree of ballisticity in subthreshold and higher ballisticity above threshold compare to conventional inversion-mode transistors, according to quantum mechanical simulations. The lower degradation of the ballisticity above threshold region gives the JNT near-ballistic transport performance and hence a high current drive. On the other hand, lower ballisticity in subthreshold region helps reducing the off-current and improves the subthreshold slope. A three-dimensional quantum mechanical device simulator based on the nonequilibrium Green's function formalism in the uncoupled mode-space approach has been developed to extract the physical parameters of the devices. (C) 2011 American Institute of Physics. (doi:10.1063/1.3559625)en
dc.description.sponsorshipScience Foundation Ireland [05/IN/I888]; European Community (EC) through the Networks of Excellence (216171, 216373)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid103510
dc.identifier.citationAkhavan, N. D., Ferain, I., Razavi, P., Yu, R. and Colinge, J.-P. (2011) 'Improvement of carrier ballisticity in junctionless nanowire transistors', Applied Physics Letters, 98(10), pp. 103510. doi: 10.1063/1.3559625en
dc.identifier.doi10.1063/1.3559625
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued10
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4325
dc.identifier.volume98
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216171/EU/Silicon-based nanostructures and nanodevices for long term nanoelectronics applications/NANOSIL
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216373/EU/European platform for low-power applications on Silicon-on-Insulator Technology/EUROSOI+
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3559625
dc.rights© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Akhavan, N. D., Ferain, I., Razavi, P., Yu, R. and Colinge, J.-P. (2011) 'Improvement of carrier ballisticity in junctionless nanowire transistors', Applied Physics Letters, 98(10), pp. 103510 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3559625en
dc.subjectQuantum transporten
dc.subjectSimulationen
dc.subjectNmen
dc.subjectTransistorsen
dc.subjectNanowiresen
dc.subjectPhononsen
dc.subjectMOSFETsen
dc.subjectDopingen
dc.titleImprovement of carrier ballisticity in junctionless nanowire transistorsen
dc.typeArticle (peer-reviewed)en
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