Propagation of nanopores during anodic etching of n-InP in KOH

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dc.contributor.authorLynch, Robert P.
dc.contributor.authorQuill, Nathan
dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorNakahara, Shohei
dc.contributor.authorBuckley, D. Noel
dc.contributor.funderIrish Research Councilen
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderFP7 People: Marie-Curie Actionsen
dc.date.accessioned2018-05-17T11:32:20Z
dc.date.available2018-05-17T11:32:20Z
dc.date.issued2013-08-28
dc.date.updated2018-05-15T23:27:49Z
dc.description.abstractWe propose a three-step model of electrochemical nanopore formation in n-InP in KOH that explains how crystallographically oriented etching can occur even though the rate-determining process (hole generation) occurs only at pore tips. The model shows that competition in kinetics between hole diffusion and electrochemical reaction determines the average diffusion distance of holes along the semiconductor surface and this, in turn, determines whether etching is crystallographic. If the kinetics of reaction are slow relative to diffusion, etching can occur at preferred crystallographic sites within a zone in the vicinity of the pore tip, leading to pore propagation in preferential directions. Symmetrical etching of three {111}A faces forming the pore tip causes it to propagate in the (remaining) 〈111〉A direction. As a pore etches, propagating atomic ledges can meet to form sites that can become new pore tips and this enables branching of pores along any of the 〈111〉A directions. The model explains the observed uniform width of pores and its variation with temperature, carrier concentration and electrolyte concentration. It also explains pore wall thickness, and deviations of pore propagation from the 〈111〉A directions. We believe that the model is generally applicable to electrochemical pore formation in III–V semiconductors.en
dc.description.sponsorshipIrish Research Council (PhD scholarships); Science Foundation Ireland (Tyndall National Institute through SFI funded National Access Programme (Project NAP No. 37 and 70))en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLynch, R. P., Quill, N., O'Dwyer, C., Nakahara, S. and Buckley, D. N. (2013) 'Propagation of nanopores during anodic etching of n-InP in KOH', Physical Chemistry Chemical Physics, 15(36), pp. 15135-15145.en
dc.identifier.doi10.1039/C3CP52253A
dc.identifier.endpage15145en
dc.identifier.issn1463-9076
dc.identifier.journaltitlePhysical Chemistry Chemical Physicsen
dc.identifier.startpage15135en
dc.identifier.urihttp://dx.doi.org/10.1039/C3CP52253A
dc.identifier.urihttps://hdl.handle.net/10468/6141
dc.identifier.volume15en
dc.language.isoenen
dc.publisherRoyal Society of Chemistry (RSC)en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP3::PEOPLE/229520/EU/IRCSET International Mobility Fellowships in Science Engineering and Technology: co-funded by Marie Curie Actions/INSPIREen
dc.relation.urihttp://pubs.rsc.org/en/content/articlelanding/2013/cp/c3cp52253a
dc.rights© the Owner Societies 2013. Royal Society of Chemistryen
dc.subjectV intermetallic compoundsen
dc.subjectPorous GAASen
dc.subjectPore formationen
dc.subjectSemiconductor electrodesen
dc.subjectFormation mechanismsen
dc.subjectCrystal orientationen
dc.subjectGallium-arsenideen
dc.subjectHF solutionen
dc.subjectSiliconen
dc.subjectMorphologyen
dc.titlePropagation of nanopores during anodic etching of n-InP in KOHen
dc.typeArticle (peer-reviewed)en
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