Low temperature exfoliation process in hydrogen-implanted germanium layers

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dc.contributor.authorFerain, Isabelle
dc.contributor.authorByun, Ki Yeol
dc.contributor.authorColinge, Cindy
dc.contributor.authorBrightup, S.
dc.contributor.authorGoorsky, M. S.
dc.contributor.funderSeventh Framework Programme
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-09-20T10:06:35Z
dc.date.available2017-09-20T10:06:35Z
dc.date.issued2010
dc.description.abstractThe feasibility of transferring hydrogen-implanted germanium to silicon with a reduced thermal budget is demonstrated. Germanium samples were implanted with a splitting dose of 5 x 10(16) H(2)(+) cm(-2) at 180 keV and a two-step anneal was performed. Surface roughness and x-ray diffraction pattern measurements, combined with cross-sectional TEM analysis of hydrogen-implanted germanium samples were carried out in order to understand the exfoliation mechanism as a function of the thermal budget. It is shown that the first anneal performed at low temperature (<= 150 degrees C for 22 h) enhances the nucleation of hydrogen platelets significantly. The second anneal is performed at 300 degrees C for 5 min and is shown to complete the exfoliation process by triggering the formation of extended platelets. Two key results are highlighted: (i) in a reduced thermal budget approach, the transfer of hydrogen-implanted germanium is found to follow a mechanism similar to the transfer of hydrogen-implanted InP and GaAs, (ii) such a low thermal budget (<300 degrees C) is found to be suitable for directly bonded heterogeneous substrates, such as germanium bonded to silicon, where different thermal expansion coefficients are involved. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3326942]en
dc.description.sponsorshipScience Foundation Ireland [08/W.1/12597]en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid54315
dc.identifier.citationFerain, I. P., Byun, K. Y., Colinge, C. A., Brightup, S. and Goorsky, M. S. (2010) 'Low temperature exfoliation process in hydrogen-implanted germanium layers', Journal of Applied Physics, 107(5), 054315 (5pp). doi: 10.1063/1.3326942en
dc.identifier.doi10.1063/1.3326942
dc.identifier.endpage5
dc.identifier.issn0021-8979
dc.identifier.issued5
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4746
dc.identifier.volume107
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/05/IN/I888/IE/Advanced Scalable Silicon-on-Insulator Devices for Beyond-End-of-Roadmap Semiconductor Technology/
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216373/EU/European platform for low-power applications on Silicon-on-Insulator Technology/EUROSOI+
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216171/EU/Silicon-based nanostructures and nanodevices for long term nanoelectronics applications/NANOSIL
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.3326942
dc.rights© 2010, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Ferain, I. P., Byun, K. Y., Colinge, C. A., Brightup, S. and Goorsky, M. S. (2010) 'Low temperature exfoliation process in hydrogen-implanted germanium layers', Journal of Applied Physics, 107(5), 054315 (5pp). doi: 10.1063/1.3326942 and may be found at http://aip.scitation.org/doi/10.1063/1.3326942en
dc.subjectGermaniumen
dc.subjectAnnealingen
dc.subjectElemental semiconductorsen
dc.subjectNucleationen
dc.subjectX-ray diffractionen
dc.titleLow temperature exfoliation process in hydrogen-implanted germanium layersen
dc.typeArticle (peer-reviewed)en
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