Influence of growth kinetics on Sn incorporation in direct band gap Ge1−xSnx nanowires

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dc.contributor.authorDoherty, Jessica
dc.contributor.authorBiswas, Subhajit
dc.contributor.authorSaladukha, Dzianis
dc.contributor.authorRamasse, Quentin
dc.contributor.authorBhattacharya, Tara Shankar
dc.contributor.authorSingha, Achintya
dc.contributor.authorOchalski, Tomasz J.
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderIrish Research Councilen
dc.date.accessioned2018-09-13T11:41:17Z
dc.date.available2018-09-13T11:41:17Z
dc.date.issued2018-07-25
dc.date.updated2018-08-21T16:32:04Z
dc.description.abstractGe1−xSnx alloys with substantial incorporation of Sn show promise as direct bandgap group IV semiconductors. This article reports the influence of growth kinetics on Sn inclusion in Ge1−xSnx alloy nanowires through manipulation of the growth constraints, i.e. temperature, precursor type and catalyst. Ge1−xSnx nanowire growth kinetics were manipulated in a vapour–liquid–solid (VLS) growth process by varying the growth temperature between 425 and 470 °C, using Au and Ag alloys as growth catalysts and different tin precursors such as allyltributytin, tertaethyltin and tetraallyltin. The profound impact of growth kinetics on the incorporation of Sn; from 7 to 9 at%; in Ge1−xSnx nanowires was clearly apparent, with the fastest growing nanowires (of comparable diameter) containing a higher amount of Sn. A kinetically dependent “solute trapping” process was assigned as the primary inclusion mechanism for Sn incorporation in the Ge1−xSnx nanowires. The participation of a kinetic dependent, continuous Sn incorporation process in the single-step VLS nanowire growth resulted in improved ordering of the Ge1−xSnx alloy lattice; as opposed to a randomly ordered alloy. The amount of Sn inclusion and the Sn impurity ordering in Ge1−xSnx nanowires has a profound effect on the quality of the light emission and on the directness of the band gap as confirmed by temperature dependent photoluminescence study and electron energy loss spectroscopy.en
dc.description.sponsorshipIrish Research Council (Grant No. GOIPG/2015/2772)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationDoherty, J., Biswas, S., Saladukha, D., Ramasse, Q., Bhattacharya, T. S., Singha, A., Ochalski, T. J. and Holmes, J. D. (2018) 'Influence of growth kinetics on Sn incorporation in direct band gap Ge1−xSnx nanowires', Journal of Materials Chemistry C, 6(32), pp. 8738-8750. doi: 10.1039/C8TC02423Een
dc.identifier.doi10.1039/C8TC02423E
dc.identifier.endpage8750en
dc.identifier.issn2050-7526
dc.identifier.issued32en
dc.identifier.journaltitleJournal of Materials Chemistry Cen
dc.identifier.startpage8738en
dc.identifier.urihttps://hdl.handle.net/10468/6772
dc.identifier.volume6en
dc.language.isoenen
dc.publisherRoyal Society of Chemistry (RSC)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI US Ireland R&D Partnership/14/US/I3057/IE/Si-compatible, Strain Engineered Staggered Gap Ge(Sn)/InxGa1-xAs Nanoscale Tunnel Field Effect Transistors/en
dc.relation.urihttp://pubs.rsc.org/en/Content/ArticleLanding/2018/TC/C8TC02423E
dc.rights© The Royal Society of Chemistry 2018en
dc.subjectGrowth kineticsen
dc.subjectCatalystsen
dc.subjectElectron energy loss spectroscopyen
dc.subjectElectron scatteringen
dc.subjectEnergy dissipationen
dc.subjectEnergy gapen
dc.subjectGold alloysen
dc.subjectKineticsen
dc.subjectNanowiresen
dc.subjectSemiconductor alloysen
dc.subjectSilver alloysen
dc.titleInfluence of growth kinetics on Sn incorporation in direct band gap Ge1−xSnx nanowiresen
dc.typeArticle (peer-reviewed)en
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