Electrical characterization of bismuth sulfide nanowire arrays by conductive atomic force microscopy

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dc.contributor.authorBirjukovs, Pavels
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorXu, Ju
dc.contributor.authorSvirksts, Janis
dc.contributor.authorBoland, John J.
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorErts, Donats
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderTrinity College Dublinen
dc.contributor.funderMinistry of Education and Science, Republic of Latviaen
dc.contributor.funderEuropean Regional Development Funden
dc.date.accessioned2019-07-12T11:55:18Z
dc.date.available2019-07-12T11:55:18Z
dc.date.issued2008-11-14
dc.date.updated2019-06-28T15:54:00Z
dc.description.abstractA new method for determining the resistivity of templated Bi2S3 nanowires by conductive atomic force (C-AFM) microscopy is described in this paper. Unlike other vertical C-AFM approaches, in our method, resistance measurements were carried out along the lengths of the nanowires. Nanowires embedded within anodic alumina membranes were exposed for contact by etching away the alumina template to form an open array of parallel nanowires. From these measurements, the contact resistance between the gold electrodes and the C-AFM probe could be determined and subtracted to give the intrinsic resistivity of the nanowires. The resistivity of the nanowires determined in such a horizontal configuration was 10−100 times lower than the resistivity determined when the same nanowires were contacted in a vertical configuration.en
dc.description.sponsorshipTrinity College Dublin (Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN)); European Regional Development Fund (ERAF/Eiropas Regionalas Attistibas Fonds)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBirjukovs, P., Petkov, N., Xu, J., Svirksts, J., Boland, J. J., Holmes, J. D. and Erts, D. (2008) 'Electrical Characterization of Bismuth Sulfide Nanowire Arrays by Conductive Atomic Force Microscopy', The Journal of Physical Chemistry C, 112(49), pp. 19680-19685. doi: 10.1021/jp805422ken
dc.identifier.doi10.1021/jp805422ken
dc.identifier.endpage19685en
dc.identifier.issn1932-7447
dc.identifier.journaltitleJournal of Physical Chemistry Cen
dc.identifier.startpage19680en
dc.identifier.urihttps://hdl.handle.net/10468/8155
dc.identifier.volume112en
dc.language.isoenen
dc.publisherAmerican Chemical Society, ACSen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/03/IN.3/I375/IE/The assembly of electronically important materials as structurally and size controlled nanowires into 3-dimensional architectures and construction of Prototype circuitry there from./en
dc.relation.urihttps://pubs.acs.org/doi/full/10.1021/jp805422k
dc.rights© 2008 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in The Journal of Physical Chemistry C, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/full/10.1021/jp805422ken
dc.subjectElectric wireen
dc.subjectAtomic force microscopyen
dc.subjectBismuthen
dc.subjectNanowiresen
dc.subjectAFMen
dc.subjectAfm probesen
dc.subjectAlumina templatesen
dc.subjectAnodic alumina membranesen
dc.subjectBismuth sulfide nanowiresen
dc.subjectConductive atomic force microscopiesen
dc.subjectConductive-atomic forcesen
dc.subjectElectrical characterizationsen
dc.subjectGold electrodesen
dc.subjectIntrinsic resistivitiesen
dc.subjectOpen arraysen
dc.subjectParallel nanowiresen
dc.subjectResistance measurementsen
dc.subjectTemplateden
dc.subjectCadmium compoundsen
dc.subjectBismuth sulfideen
dc.titleElectrical characterization of bismuth sulfide nanowire arrays by conductive atomic force microscopyen
dc.typeArticle (non peer-reviewed)en
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