Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

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dc.check.date2020-04-23
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorChristian, George M.
dc.contributor.authorSchulz, Stefan
dc.contributor.authorHammersley, Simon
dc.contributor.authorKappers, Menno J.
dc.contributor.authorFrentrup, Martin
dc.contributor.authorHumphreys, Colin J.
dc.contributor.authorOliver, Rachel A.
dc.contributor.authorDawson, Philip
dc.contributor.funderEngineering and Physical Sciences Research Councilen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2020-01-20T11:46:28Z
dc.date.available2020-01-20T11:46:28Z
dc.date.issued2019-04-23
dc.date.updated2020-01-20T11:24:29Z
dc.description.abstractWe present low temperature photoluminescence spectra from four InGaN/GaN single quantum well structures where the total electric field across the quantum wells was varied by the manipulation of the surface polarization field, which is of opposite sign to the electrostatic built-in field originating from spontaneous and piezoelectric polarization intrinsic to the material. We find that, overall, the photoluminescence peak emission energy increases and its full width at half maximum decreases with decreasing total internal electric field. Using an atomistic tight-binding model of a quantum well with different total internal electric fields, we find that the calculated mean and standard deviation ground state transition energies follow the same trends with field as our experimentally determined spectral peak energies and widths. Overall, we attribute this behavior to a reduction in the quantum confined Stark effect and a connected reduction in the variation of ground state transition energies with decreasing electric field, respectively.en
dc.description.sponsorshipEngineering and Physical Sciences Research Council (Grants No. EP/I012591/1; No. EP/M010627/1; No. EP/M010589/1)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleidSCCB09en
dc.identifier.citationChristian, G. M., Schulz, S., Hammersley, S., Kappers, M. J., Frentrup, M., Humphreys, C. J., Oliver, R. A. and Dawson, P. (2019) 'Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength', Japanese Journal of Applied Physics, 58, SCCB09 (7pp). doi: 10.7567/1347-4065/ab0407en
dc.identifier.doi10.7567/1347-4065/ab0407en
dc.identifier.eissn1347-4065
dc.identifier.endpage7en
dc.identifier.issn0021-4922
dc.identifier.journaltitleJapanese Journal of Applied Physicsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/9531
dc.identifier.volume58en
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/13/SIRG/2210/IE/Shaping the electronic and optical properties of non- and semi-polar nitride-based semiconductor nanostructures/en
dc.relation.urihttp://dx.doi.org/10.7567/1347-4065/ab0407
dc.relation.urihttps://data.mendeley.com/datasets/5c9b7283td/1
dc.rights© 2019, The Japan Society of Applied Physics. Published by IOP Publishing. This Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subjectPhotoluminescence peak emission energyen
dc.subjectDecreasing total internal electric fielden
dc.subjectQuantum wellen
dc.subjectStark effecten
dc.subjectElectric fielden
dc.titleOptical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strengthen
dc.typeArticle (peer-reviewed)en
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