Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells

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dc.check.date2021-12-03
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorFinot, Sylvain
dc.contributor.authorGrenier, Vincent
dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorBougerol, Catherine
dc.contributor.authorPampili, Pietro
dc.contributor.authorEymery, Joël
dc.contributor.authorParbrook, Peter J.
dc.contributor.authorDurand, Christophe
dc.contributor.authorJacopin, Gwénolé
dc.contributor.funderAgence Nationale de la Rechercheen
dc.contributor.funderIrish Research Councilen
dc.contributor.funderCampus Franceen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2020-12-10T11:46:46Z
dc.date.available2020-12-10T11:46:46Z
dc.date.issued2020-12-03
dc.date.updated2020-12-10T10:31:42Z
dc.description.abstractRelaxation of tensile strain in AlGaN heterostructures grown on a GaN template can lead to the formation of cracks. These extended defects locally degrade the crystal quality, resulting in a local increase in non-radiative recombinations. The effect of such cracks on the optical and structural properties of core–shell AlGaN/AlGaN multiple quantum wells grown on GaN microwires is comprehensively characterized by means of spectrally and time-correlated cathodoluminescence (CL). We observe that the CL blueshifts near a crack. By performing 6 x 6 k.p simulations in combination with transmission electron microscopy analysis, we ascribe this shift to the strain relaxation by the free surface near cracks. By simultaneously recording the variations of both the CL lifetime and the CL intensity across the crack, we directly assess the carrier dynamics around the defect at T ¼ 5 K. We observe that the CL lifetime is reduced typically from 500 ps to less than 300 ps and the CL intensity increases by about 40% near the crack. The effect of the crack on the optical properties is, therefore, of two natures. First, the presence of this defect locally increases non-radiative recombinations, while at the same time, it locally improves the extraction efficiency. These findings emphasize the need for time-resolved experiments to avoid experimental artifacts related to local changes of light collection.en
dc.description.sponsorshipAgence Nationale de la Recherche (“Investissements d’avenir” program ANR-15-IDEX-02); Irish Research Council and Campus France (French-Irish program ULYSSES); Science Foundation Ireland (Award Nos. 18/TIDA/6066 and 12/RC/2276_P2)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationFinot, S., Grenier, V., Zubialevich, V., Bougerol, C., Pampili, P., Eymery, J., Parbrook, P. J., Durand, C. and Jacopin, G. (2020) 'Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells', Applied Physics Letters, 117(22), 221105 (5pp). doi: 10.1063/5.0023545en
dc.identifier.doi10.1063/5.0023545en
dc.identifier.endpage5en
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued22en
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/10828
dc.identifier.volume117en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.rights© 2020, the Authors. Published under license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author(s) and AIP Publishing. This article appeared as: Finot, S., Grenier, V., Zubialevich, V., Bougerol, C., Pampili, P., Eymery, J., Parbrook, P. J., Durand, C. and Jacopin, G. (2020) 'Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells', Applied Physics Letters, 117(22), 221105 (5pp), doi: 10.1063/5.0023545, and may be found at https://doi.org/10.1063/5.0023545en
dc.subjectAIGaNen
dc.subjectGaNen
dc.subjectNon-radiative recombinationsen
dc.subjectCathodoluminescence (CL)en
dc.titleCarrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wellsen
dc.typeArticle (peer-reviewed)en
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