6-H single-crystal silicon carbide thermo-optic coefficient measurements for ultrahigh temperatures up to 1273 K in the telecommunications infrared band

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dc.contributor.authorRiza, Nabeel A.
dc.contributor.authorArain, Muzzamil
dc.contributor.authorPerez, Frank
dc.contributor.funderU.S. Department of Energyen
dc.date.accessioned2020-07-14T08:52:19Z
dc.date.available2020-07-14T08:52:19Z
dc.date.issued2005-11-21
dc.date.updated2020-07-14T08:42:56Z
dc.description.abstract6H single-crystal silicon carbide (SiC) is an excellent optical material for extremely high temperature applications. Furthermore, the telecommunication infrared band (e.g., 1500-1600 nm) is an eye safe and high commercial maturity optical technology. With this motivation, the thermo-optic coefficient partial derivative n/partial derivative T for 6H single-crystal SiC is experimentally measured and analyzed from near room temperature to a high temperature of 1273 K with data taken at the 1550 nm wavelength. Specifically, the natural etalon behavior of 6-H single-crystal SiC is exploited within a simple polarization-insensitive hybrid fiber-free-space optical interferometric system to take accurate and rapid optical power measurements leading to partial derivative n/partial derivative T data. The reported results are in agreement with the previously reported research at the loweren
dc.description.sponsorshipU.S. Department of Energy (under Award No. DE-FC36-03NT41923)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid103512en
dc.identifier.citationRiza, N. A., Arain, M., and Perez, F. (2005) '6-H single-crystal silicon carbide thermo-optic coefficient measurements for ultrahigh temperatures up to 1273 K in the telecommunications infrared band', Journal of Applied Physics, 98, 103512, (5 pp). doi: 10.1063/1.2133897en
dc.identifier.doi10.1063/1.2133897en
dc.identifier.endpage5en
dc.identifier.issn0021-8979
dc.identifier.issued1010en
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/10244
dc.identifier.volume98en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttps://aip.scitation.org/doi/full/10.1063/1.2133897
dc.rights© 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in J. Appl. Phys. 98, 103512 (2005) and may be found at https://aip.scitation.org/doi/pdf/10.1063/1.2133897en
dc.subjectInterferometryen
dc.subjectOptical fibersen
dc.subjectOptical propertiesen
dc.subjectSingle crystalsen
dc.subjectThermal effectsen
dc.subjectCarbidesen
dc.subjectThermo optic effectsen
dc.subjectInterpolationen
dc.subjectTelecommunicationsen
dc.subjectInterferometersen
dc.subjectThermoelectricityen
dc.subjectFabry-Perot interferometersen
dc.subjectOptical materialsen
dc.subjectOptical propertiesen
dc.subjectOptical efficiencyen
dc.subjectSilicon carbideen
dc.title6-H single-crystal silicon carbide thermo-optic coefficient measurements for ultrahigh temperatures up to 1273 K in the telecommunications infrared banden
dc.typeArticle (peer-reviewed)en
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