Structural and electronic properties of polycrystalline InAs thin films deposited on silicon dioxide and glass at temperatures below 500 °c

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dc.contributor.authorCurran, Anya
dc.contributor.authorGocalinska, Agnieszka
dc.contributor.authorPescaglini, Andrea
dc.contributor.authorSecco, Eleonora
dc.contributor.authorMura, Enrica
dc.contributor.authorThomas, Kevin
dc.contributor.authorNagle, Roger E.
dc.contributor.authorSheehan, Brendan
dc.contributor.authorPovey, Ian M.
dc.contributor.authorPelucchi, Emanuele
dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorHurley, Paul K.
dc.contributor.authorGity, Farzan
dc.contributor.funderIrish Research Councilen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2022-11-04T14:04:40Z
dc.date.available2022-11-04T14:04:40Z
dc.date.issued2021-02-05
dc.date.updated2022-10-25T15:39:46Z
dc.description.abstractPolycrystalline indium arsenide (poly InAs) thin films grown at 475 °C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the films are reported, with electron mobilities of ~100 cm2/V·s achieved at room temperature, and values reaching 155 cm2/V·s for a heterostructure including the polycrystalline InAs film. Test structures fabricated with an aluminum oxide (Al2O3) top-gate dielectric show that transistor-type behavior is possible when poly InAs films are implemented as the channel material, with maximum ION/IOFF > 250 achieved at −50 °C and ION/IOFF = 90 at room temperature. Factors limiting the ION/IOFF ratio are investigated and recommendations are made for future implementation of this material.en
dc.description.sponsorshipIrish Research Council (EPSPG/2017/356); Science Foundation Ireland (12/RC/2278_P2, 15/IA/2864, 12/RC/2276, and 12/RC/2276-P2)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCurran, A., Gocalinska, A., Pescaglini, A., Secco, E., Mura, E., Thomas, K., Nagle, R.E., Sheehan, B., Povey, I.M., Pelucchi, E., O’Dwyer, C., Hurley, P.K. and Gity, F. (2021) ‘Structural and electronic properties of polycrystalline inas thin films deposited on silicon dioxide and glass at temperatures below 500 °c’, Crystals, 11(2), 160 (11 pp). https://doi.org/10.3390/cryst11020160en
dc.identifier.doi10.3390/cryst11020160en
dc.identifier.endpage11en
dc.identifier.issn2073-4352
dc.identifier.issued2en
dc.identifier.journaltitleCrystalsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/13816
dc.identifier.volume11en
dc.language.isoenen
dc.publisherMDPIen
dc.relation.urihttps://doi.org/10.3390/cryst11020160
dc.rights© 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/)en
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subjectInAsen
dc.subjectPolycrystallineen
dc.subjectThin filmsen
dc.titleStructural and electronic properties of polycrystalline InAs thin films deposited on silicon dioxide and glass at temperatures below 500 °cen
dc.typeArticle (peer-reviewed)en
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