High-uniformity GaN micropyramids and platelets by selective area growth

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dc.contributor.authorLi, Changhao
dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorParbrook, Peter J.
dc.contributor.authorCorbett, Brian
dc.contributor.authorLi, Zhi
dc.contributor.funderIrish Photonics Integration Centre
dc.contributor.funderScience Foundation Ireland, SFI, SFI-IRC_22/PATH-S/10800-SFI-12/RC/2276_P2_IPIC
dc.date.accessioned2026-04-07T10:50:02Z
dc.date.available2026-04-07T10:50:02Z
dc.date.issued2026-04-06
dc.description.abstractThe development of uniform GaN micropyramids and platelets via selective area growth is a critical step toward advancing III-nitride device technologies, particularly for microlight-emitting diode applications. This work investigates the origins of morphological nonuniformity in micropyramids and microplatelets grown by metal–organic chemical vapor deposition (MOCVD). We observe that a direct one-step growth approach leads to significant growth rate inhomogeneity across arrays. To shed light on this issue, we examine the mechanisms driving nonuniformity and explore process modifications aimed at mitigating these effects. Building on these insights, we propose a controlled multistep growth strategy that combines sequential growth and thermal treatment phases. This approach is demonstrated to enhance the surface morphology and structural regularity. The work contributes to the broader objective of enabling scalable and high-precision GaN microstructure fabrication for next-generation optoelectronic applications.en
dc.description.sponsorshipThis work is funded by the Research Ireland Pathway Program (SFI-IRC_22/PATH-S/10800) and Irish Photonics Integration Centre (IPIC) (SFI-12/RC/2276_P2_IPIC). All the authors gratefully acknowledge the funding from the Science Foundation Ireland (SFI) Pathway Program (SFI-IRC_22/PATH-S/10800) and Irish Photonics Integration Centre (IPIC) EMERGE Program (SFI-12/RC/2276_P2_IPIC). The authors thank Dr. Brendan Sheehan for his support with AFM characterization and Dr. Pietro Pampili for fruitful discussions regarding the growth issues. All the authors gratefully acknowledge the funding from the Science Foundation Ireland (SFI) Pathway Program (SFI-IRC_22/PATH-S/10800) and Irish Photonics Integration Centre (IPIC) EMERGE Program (SFI-12/RC/2276_P2_IPIC). The authors thank Dr. Brendan Sheehan for his support with AFM characterization and Dr. Pietro Pampili for fruitful discussions regarding the growth issues. This work is funded by the Research Ireland Pathway Program (SFI-IRC_22/PATH-S/10800) and Irish Photonics Integration Centre (IPIC) (SFI-12/RC/2276_P2_IPIC).
dc.description.versionAccepted Version
dc.format.extent11
dc.format.mimetypeapplication/pdfen
dc.identifier.authororcidLi, Changhao
dc.identifier.authororcidZubialevich, Vitaly Z.§0000-0003-4783-5104
dc.identifier.authororcidParbrook, Peter J.§0000-0003-3287-512X
dc.identifier.authororcidCorbett, Brian§0000-0002-9002-8212
dc.identifier.authororcidLi, Zhi§0000-0002-0417-832X
dc.identifier.citationLi, C, Zubialevich, V Z, Parbrook, P J, Corbett, B & Li, Z 2026, 'High-uniformity GaN micropyramids and platelets by selective area growth', Crystal Growth and Design, vol. 26, no. 8, pp. 2928-2938. < https://pubs.acs.org/doi/10.1021/acs.cgd.5c01506 >
dc.identifier.endpage2938
dc.identifier.issn1528-7483
dc.identifier.issued8
dc.identifier.journaltitleCrystal Growth and Design
dc.identifier.othercrossref: 10.1021/acs.cgd.5c01506
dc.identifier.otherORCID: /0000-0002-0417-832X/work/211020694
dc.identifier.otherORCID: /0000-0002-9002-8212/work/211020965
dc.identifier.startpage2928
dc.identifier.urihttps://hdl.handle.net/10468/18681
dc.identifier.volume26
dc.language.isoen
dc.publisherAmerican Chemical Society
dc.relation.urihttps://www.scopus.com/pages/publications/105036596118
dc.relation.urihttps://pubs.acs.org/doi/10.1021/acs.cgd.5c01506
dc.rightsPublisher Copyright: © 2026 The Authors. Published by American Chemical Society
dc.rights.accessrightsopen access
dc.rights.licensenameAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.statusPeer reviewed
dc.subjectCells
dc.subjectGenetics
dc.subjectMicrostructures
dc.subjectNitrides
dc.subjectThermodynamic properties
dc.subject[Tyndall]
dc.titleHigh-uniformity GaN micropyramids and platelets by selective area growthen
dc.typeArticle (peer-reviewed)
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