Aligned silicon nanofins via the directed self-assembly of PS-b-P4VP block copolymer and metal oxide enhanced pattern transfer

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dc.contributor.authorCummins, Cian
dc.contributor.authorGangnaik, Anushka S.
dc.contributor.authorKelly, Róisín A.
dc.contributor.authorBorah, Dipu
dc.contributor.authorO'Connell, John
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorGeorgiev, Yordan M.
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorMorris, Michael A.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2016-01-12T11:08:40Z
dc.date.available2016-01-12T11:08:40Z
dc.date.issued2015-03-16
dc.description.abstract'Directing' block copolymer (BCP) patterns is a possible option for future semiconductor device patterning, but pattern transfer of BCP masks is somewhat hindered by the inherently low etch contrast between blocks. Here, we demonstrate a 'fab' friendly methodology for forming well-registered and aligned silicon (Si) nanofins following pattern transfer of robust metal oxide nanowire masks through the directed self-assembly (DSA) of BCPs. A cylindrical forming poly(styrene)-block-poly(4-vinyl-pyridine) (PS-b-P4VP) BCP was employed producing 'fingerprint' line patterns over macroscopic areas following solvent vapor annealing treatment. The directed assembly of PS-b-P4VP line patterns was enabled by electron-beam lithographically defined hydrogen silsequioxane (HSQ) gratings. We developed metal oxide nanowire features using PS-b-P4VP structures which facilitated high quality pattern transfer to the underlying Si substrate. This work highlights the precision at which long range ordered [similar]10 nm Si nanofin features with 32 nm pitch can be defined using a cylindrical BCP system for nanolithography application. The results show promise for future nanocircuitry fabrication to access sub-16 nm critical dimensions using cylindrical systems as surface interfaces are easier to tailor than lamellar systems. Additionally, the work helps to demonstrate the extension of these methods to a 'high [small chi]' BCP beyond the size limitations of the more well-studied PS-b-poly(methyl methylacrylate) (PS-b-PMMA) system.en
dc.description.sponsorshipScience Foundation Ireland (SFI Grant number 09/IN.1/602, CSET/CRANN); European Commission (LAMAND NMP FP7)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCUMMINS, C., GANGNAIK, A., KELLY, R. A., BORAH, D., O'CONNELL, J., PETKOV, N., GEORGIEV, Y. M., HOLMES, J. D. & MORRIS, M. A. 2015. Aligned silicon nanofins via the directed self-assembly of PS-b-P4VP block copolymer and metal oxide enhanced pattern transfer. Nanoscale, 7, 6712-6721. http://dx.doi.org/10.1039/C4NR07679Fen
dc.identifier.doi10.1039/C4NR07679F
dc.identifier.endpage6721en
dc.identifier.issn2040-3364
dc.identifier.issued15en
dc.identifier.journaltitleNanoscaleen
dc.identifier.startpage6712en
dc.identifier.urihttps://hdl.handle.net/10468/2178
dc.identifier.volume7en
dc.language.isoenen
dc.publisherThe Royal Society of Chemistryen
dc.rights© 2015, the Authors. This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.en
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectBlock copolymersen
dc.subjectCopolymersen
dc.subjectMetallic compoundsen
dc.subjectNanowiresen
dc.subjectSelf assemblyen
dc.subjectSemiconductor devicesen
dc.subjectStyreneen
dc.subjectCritical dimensionen
dc.subjectDirected assemblyen
dc.subjectDirected self-assemblyen
dc.subjectHydrogen silsequioxaneen
dc.subjectMetal oxide nanowiresen
dc.subjectPattern transfersen
dc.subjectSolvent-vapor annealingen
dc.subjectSurface interfacesen
dc.subjectSiliconen
dc.titleAligned silicon nanofins via the directed self-assembly of PS-b-P4VP block copolymer and metal oxide enhanced pattern transferen
dc.typeArticle (peer-reviewed)en
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