Numerical simulation of the anodic formation of nanoporous InP
Lynch, Robert P.; O'Dwyer, Colm; Clancy, I.; Corcoran, D.; Buckley, D. Noel
Date:
2004-01
Copyright:
© The Electrochemical Society, Inc. 2004. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in Lynch, R., O’ Dwyer, C., Clancy, I., Corcoran, D., Buckley, D. N. (2004) 'Numerical Simulation of the Anodic Formation of Nanoporous InP', 206th Meeting of the Electrochemical Society: State -of-the-Art Program on Compound Semiconductors XLI. Hilton Hawaiian Village, Honolulu, Hawaii, 3-8 October. Pennington, NJ: The Electrochemical Society, 6, pp. 85-95.
Citation:
Lynch, R., O’Dwyer, C., Clancy, I., Corcoran, D., Buckley, D. N. (2004) 'Numerical Simulation of the Anodic Formation of Nanoporous InP', 206th Meeting of the Electrochemical Society: State-of-the-Art Program on Compound Semiconductors XLI. Hilton Hawaiian Village, Honolulu, Hawaii, 3-8 October. Pennington, NJ: The Electrochemical Society, 6, pp. 85-95.
Abstract:
Anodic etching of n-type InP in KOH electrolytes under suitable
conditions leads to the formation of a nanoporous region beneath a ~40
nm dense near-surface layer [1]. The early stages of the process involve
the formation of square-based pyramidal porous domains [2] and a
mechanism is proposed based on directional selectivity of pore growth
along the <100> directions. A numerical model of this mechanism is
described in this paper. In the algorithm used the growth is limited to the
<100> directions and the probability of growth at any pore tip is
controlled by the potential and the concentration of electrolyte at the pore
tip as well as the suitability of the pore tip to support further growth. The
simulated porous structures and their corresponding current versus time
curves are in good agreement with experimental data. The results of the
simulation also suggest that, after an initial increase in current caused by
the spreading out of the porous domains from their origins, growth is
limited by the diffusion rate of electrolyte along the pores with the final
fall-off in current being caused by irreversible processes such as the
formation of a passivating film at the tips or some other modification of
the state of the pore tip.
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