Citation:Schulz, S. and O'Reilly, E. P. (2010) 'Theory of reduced built-in polarization field in nitride-based quantum dots', Physical Review B, 82, 033411 (4pp). doi: 10.1103/PhysRevB.82.033411
We use a surface integral method to show that the polarization potential in an InGaN/GaN quantum dot (QD) grown along the [0001] direction is strongly reduced compared to that in a quantum well (QW) of the same height. We use simple analytic expressions and different dot geometries to show that the reduction originates from two effects (i) the reduction in the QD [0001] surface area and (ii) strain redistributions in the QD system. The In composition can therefore be increased in a QD compared to a QW, enabling efficient recombination to longer wavelengths in InGaN QD structures.
This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement