HfO2‐based ferroelectrics applications in nanoelectronics
Dragoman, Mircea; Aldrigo, Martino; Dragoman, Daniela; Iordanescu, Sergiu; Dinescu, Adrian; Modreanu, Mircea
Date:
2021-01-14
Copyright:
© 2021, Wiley‐VCH GmbH. This is the peer reviewed version of the following article: Dragoman, M., Aldrigo, M., Dragoman, D., Iordanescu, S., Dinescu, A. and Modreanu, M. (2021) 'HfO2‐based ferroelectrics applications in nanoelectronics', physica status solidi (RRL) - Rapid Research Letters, 2000521 (13pp), doi: 10.1002/pssr.202000521, which has been published in final form at https://doi.org/10.1002/pssr.202000521. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
Full text restriction information:
Access to this article is restricted until 12 months after publication by request of the publisher.
Restriction lift date:
2022-01-14
Citation:
Dragoman, M., Aldrigo, M., Dragoman, D., Iordanescu, S., Dinescu, A. and Modreanu, M. (2021) 'HfO2‐based ferroelectrics applications in nanoelectronics', physica status solidi (RRL) - Rapid Research Letters, 2000521 (13pp). doi: 10.1002/pssr.202000521
Abstract:
This article is dedicated to HfO2-based ferroelectrics applications in nanoelectronics, especially to topics not well developed up to now, such as microwaves, energy harvesting, and neuromorphic devices working as artificial neurons and synapses. Other well-covered topics in the literature, such as memories or negative-capacitance ferroelectric field-effect transistors, will be only briefly mentioned. The main impact of HfO2-based ferroelectrics is the possibility of using them for fabricating at the wafer-level complementary metal oxide semiconductor (CMOS) compatible high-frequency devices, such as phase-shifters, antenna arrays, or filters with a high degree of tunability and miniaturization, as well as energy harvesting devices and neuromorphic key components. In addition, the recent transfer of 2D materials on HfO2 ferroelectrics has demonstrated new physical effects, such as opening a 0.2 eV bandgap in graphene monolayers, and allows the manufacture of very high-mobility field-effect transistors (FETs) based on graphene/HfZrO.
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