Strongly nonparabolic variation of the band gap in InxAl1-xN with low indium content

Show simple item record Zubialevich, Vitaly Z. Dinh, Duc V. Alam, Shahab N. Schulz, Stefan O'Reilly, Eoin P. Parbrook, Peter J. 2021-03-09T15:49:27Z 2021-03-09T15:49:27Z 2015-12-14
dc.identifier.citation Zubialevich, V. Z., Dinh, D. V., Alam, S. N., Schulz, S., O’Reilly, E. P. and Parbrook, P. J. (2015) 'Strongly nonparabolic variation of the band gap in InxAl1−xN with low indium content', Semiconductor Science and Technology, 31(2), 025006 (11 pp). doi: 10.1088/0268-1242/31/2/025006 en
dc.identifier.volume 31 en
dc.identifier.startpage 1 en
dc.identifier.endpage 11 en
dc.identifier.issn 0268-1242
dc.identifier.doi 10.1088/0268-1242/31/2/025006 en
dc.description.abstract 80–120 nm thick InxAl1−xN epitaxial layers with 0 < x < 0.224 were grown by metalorganic vapour phase epitaxy on AlN/Al2O3-templates. The composition was varied through control of the growth temperature. The composition dependence of the band gap was estimated from the photoluminescence excitation absorption edge for 0 < x < 0.11 as the material with higher In content showed no luminescence under low excitation. A very rapid decrease in band gap was observed in this range, dropping down below 5.2 eV at x = 0.05, confirming previous theoretical work that used a band-anticrossing model to describe the strongly x-dependent bowing parameter, which in this case exceeds 25 eV in the x → 0 limit. A double absorption edge observed for InAlN with x < 0.01 was attributed to crystal-field splitting of the highest valence band states. Our results indicate also that the ordering of the valence bands is changed at much lower In contents than one would expect from linear interpolation of the valence band parameters. These findings on band gap bowing and valence band ordering are of direct relevance for the design of InAlN-containing optoelectronic devices. en
dc.description.sponsorship Science Foundation Ireland ((SFI under grant Nos. SFI/10/IN.1/I2993, 10/IN.1/I2994 and 13/SIRG/2210) SFI Engineering Professorship scheme (SFI/07/EN/E001A)); Higher Education Authority (Irish Higher Education Authority Programme for Research in Third Level Institutions Cycles 4 and 5 via the INSPIRE and TYFFANI projects); European Commission ((European Union 7th Framework Programme DEEPEN (grant agreement no. 604416), (European Union 7th Framework Programme ALIGHT project (agreement no. FP7-280587)); Iranian Ministry of Science, Research and Technology en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher IOP Publishing en
dc.rights © 2016 IOP Publishing Ltd. This is the Accepted Manuscript version of an article accepted for publication in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at en
dc.subject InAlN en
dc.subject AlInN en
dc.subject band gap en
dc.subject band gap bowing parameter en
dc.subject photoluminescence excitation en
dc.title Strongly nonparabolic variation of the band gap in InxAl1-xN with low indium content en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Vitaly Zubialevich, Tyndall Photonics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en 2021-03-05T14:17:54Z
dc.description.version Accepted Version en
dc.internal.rssid 372342754
dc.internal.wokid 000372412900008
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Seventh Framework Programme en
dc.contributor.funder Higher Education Authority en
dc.contributor.funder Ministry of Science Research and Technology en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Semiconductor Science and Technology en
dc.internal.copyrightchecked No
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en
dc.internal.IRISemailaddress en
dc.internal.IRISemailaddress en
dc.internal.IRISemailaddress en
dc.identifier.articleid 025006 en
dc.identifier.eissn 1361-6641

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