Citation:Dinh, D. V., Quan, Z., Roycroft, B., Parbrook, P. J. and Corbett, B. (2016) 'GHz bandwidth semipolar (112¯2) InGaN/GaN light-emitting diodes', Optics Letters, 41(24), pp. 5752-5755. doi: 10.1364/OL.41.005752
We report on the electrical-to-optical modulation bandwidths of non-mesa-etched semipolar (112¯2) InGaN/GaN light-emitting diodes (LEDs) operating at 430–450 nm grown on high-quality (112¯2) GaN templates, which were prepared on patterned (101¯2) 𝑟-plane sapphire substrates. The measured frequency response at −3 dB of the LEDs was up to 1 GHz. A high back-to-back data transmission rate of above 2.4 Gbps is demonstrated using a non-return-to-zero on-off keying modulation scheme. This indicates that (112¯2) LEDs are suitable gigabit per second data transmission for use in visible-light communication applications.
This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement