GHz bandwidth semipolar (112¯2) InGaN/GaN light-emitting diodes

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GHz bandwidth semipolar (112¯2) InGaN/GaN light-emitting diodes

Dinh, Duc V.; Quan, Zhiheng; Roycroft, Brendan; Parbrook, Peter J.; Corbett, Brian
Date: 2016-12-12
Copyright: © 2016, Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.
Citation: Dinh, D. V., Quan, Z., Roycroft, B., Parbrook, P. J. and Corbett, B. (2016) 'GHz bandwidth semipolar (112¯2) InGaN/GaN light-emitting diodes', Optics Letters, 41(24), pp. 5752-5755. doi: 10.1364/OL.41.005752
Published Version: 10.1364/OL.41.005752

Abstract:

We report on the electrical-to-optical modulation bandwidths of non-mesa-etched semipolar (112¯2) InGaN/GaN light-emitting diodes (LEDs) operating at 430–450 nm grown on high-quality (112¯2) GaN templates, which were prepared on patterned (101¯2) 𝑟-plane sapphire substrates. The measured frequency response at −3 dB of the LEDs was up to 1 GHz. A high back-to-back data transmission rate of above 2.4 Gbps is demonstrated using a non-return-to-zero on-off keying modulation scheme. This indicates that (112¯2) LEDs are suitable gigabit per second data transmission for use in visible-light communication applications.

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