Modelling and analysis of hydrogenated and dilute nitride semiconductors

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dc.contributor.advisor O'Reilly, Eoin en
dc.contributor.author Arkani, Reza
dc.date.accessioned 2021-09-13T13:12:08Z
dc.date.available 2021-09-13T13:12:08Z
dc.date.issued 2021-07-01
dc.date.submitted 2021-07-01
dc.identifier.citation Arkani, R. 2021. Modelling and analysis of hydrogenated and dilute nitride semiconductors. PhD Thesis, University College Cork. en
dc.identifier.endpage 126 en
dc.identifier.uri http://hdl.handle.net/10468/11885
dc.description.abstract Dilute nitride alloys, containing small fractions of nitrogen (N), have recently attracted research interest due to their potential for application in a range of semiconductor optoelectronic devices (e.g. lasers, light emitting diodes and single photon sources). Experiments have revealed that dilute nitride alloys such as GaAs1−xNx, in which a small fraction x of the arsenic (As) atoms in the III-V semiconductor GaAs are replaced by N, exhibit a number of unusual properties. For example, the band gap energy decreases rapidly with increasing N composition x, by up to 150 meV per % N replacing As in the alloy. This provides an electronic band structure condition which is indeed promising for the development of highly efficient and temperature stable semiconductor optoelectronic devices based on GaAs. We develop a fundamental understanding of this unusual class of semiconductor alloys and identify general material properties which are promising for application in light sources such as light emitting diodes and single photon sources. By performing detailed k·p calculations, we investigate the electronic band structure of nitrogen-free and dilute nitride III-V semiconduc tors. We reinforce our theoretical investigations by comparing our calculations to the results of experimental measurements. We first analyse the optical properties of type-I InAs1−xSbx/AlyIn1−yAs quantum wells (QWs) grown on relaxed AlyIn1−yAs metamorphic buffer layers (MBLs) using GaAs substrates, using a theoretical model based on an eight-band k·p Hamiltonian. The theoretical calculations, which are in good agreement with experiment, identify that the observed enhancement in PL intensity with increasing wavelength is associated with the impact of compressive strain on the QW valence band structure. Via a systematic analysis of strain-balanced quantum well structures we predict that growth of narrow (≈ 4-5 nm) strained wells could lead to a further doubling in optical efficiency for devices designed to emit at 3.3 µm. Analysing the properties and performance of strain-balanced structures designed to emit at longer wavelengths, we rec ommend the incorporation of dilute concentrations of nitrogen (N) to achieve emission beyond 4 µm. We confirm the benefits of growth on relaxed AlyIn1−yAs MBLs, with an Al composition y = 12% providing significantly improved band offsets and optical characterisics compared to a MBL with y = 6%. In the next part of the thesis, we investigate the design of type-II GaAsSb/GaAs quantum ring based (QR) intermediate band solar cells. We present an analytical solution of Schr¨odinger’s equation for a cylindrical QR of infinite potential depth to describe the evolution of the QR ground state with QR morphology, and then undertake 8-band k·p calculations for more de tailed analysis. The calculated electronic properties demonstrate several benefits, including (i) large hole ionisation energies, mitigating thermionic emission from the intermediate band, and (ii) electron-hole spatial overlaps exceeding those in conventional GaAs1−xSbx/GaAs quantum dots. Finally, we turn our attention to modelling hydrogenated InGaAsN/GaAs nanostructures for application as single photon sources at telecommunication wavelengths. The longest wavelength emission achieved to date from such structures is at 1.2 µm. By analysing their electronic band structure and comparing with existing literature data for InGaAsN/GaAs QW structures, we identify a range of QW compositions and well widths for which it should be possible to achieve hydrogenated InGaAsN/GaAs nanostructures emitting at 1.31 µm. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher University College Cork en
dc.rights © 2021, Reza Arkani. en
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/4.0/ en
dc.subject Electronic band structure en
dc.subject Light emitting diode en
dc.subject Solar cell en
dc.subject Single photon source en
dc.title Modelling and analysis of hydrogenated and dilute nitride semiconductors en
dc.type Doctoral thesis en
dc.type.qualificationlevel Doctoral en
dc.type.qualificationname PhD - Doctor of Philosophy en
dc.internal.availability Full text available en
dc.description.version Accepted Version en
dc.contributor.funder European Commission en
dc.contributor.funder Science Foundation Ireland en
dc.description.status Not peer reviewed en
dc.internal.school Physics en
dc.internal.conferring Autumn 2021 en
dc.internal.ricu Tyndall National Institute en
dc.relation.project info:eu-repo/grantAgreement/EC/H2020::MSCA-ITN-ETN/641899/EU/Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics/PROMIS en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3082/IE/Multiscale Simulation and Analysis of emerging Group IV and III-V Semiconductor Materials and Devices/ en
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