Capacitance and conductance for an MOS system in inversion, with oxide capacitance and minority carrier lifetime extractions
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Accepted Version
Date
2014-10
Authors
Monaghan, Scott
O'Connor, Éamon
Rios, Rafael
Ferdousi, Fahmida
Floyd, Liam
Ryan, Eimear
Cherkaoui, Karim
Povey, Ian M.
Kuhn, Kelin J.
Hurley, Paul K.
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published Version
Abstract
Experimental observations for the In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) system in inversion indicate that the measured capacitance (C) and conductance (G or G m ), are uniquely related through two functions of the alternating current angular frequency (ω). The peak value of the first function (G/ω) is equal to the peak value of the second function (-dC/dlog e (ω) ≡ -ωdC/dω). Moreover, these peak values occur at the same angular frequency (ω m ), that is, the transition frequency. The experimental observations are confirmed by physics-based simulations, and applying the equivalent circuit model for the MOS system in inversion, the functional relationship is also demonstrated mathematically and shown to be generally true for any MOS system in inversion. The functional relationship permits the discrimination between high interface state densities and genuine surface inversion. The two function peak values are found to be equal to C ox 2 /(2(C ox + C D )) where C ox is the oxide capacitance per unit area and C D is the semiconductor depletion capacitance in inversion. The equal peak values of the functions, and their observed symmetry relation about ω m on a logarithmic ω plot, opens a new route to experimentally determining C ox . Finally, knowing ω m permits the extraction of the minority carrier generation lifetime in the bulk of the In 0.53 Ga 0.47 As layer.
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Keywords
Al₂O₃ , Capacitance , Conductance , III–V , In₀.₅₃Ga₀.₄₇As , Interface state defects , Inversion , Metal–oxide–semiconductor (MOS) system , Minority carrier generation lifetime , Oxide capacitance , Semiconductor quality
Citation
Monaghan, S., O’Connor, É., Rios, R., Ferdousi, F., Floyd, L., Ryan, E., Cherkaoui, K., Povey, I. M., Kuhn, K. J. and Hurley, P. K. (2014) 'Capacitance and conductance for an MOS system in inversion, with oxide capacitance and minority carrier lifetime extractions', IEEE Transactions on Electron Devices, 61(12), pp. 4176-4185. doi: 10.1109/TED.2014.2362524
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