Insertion of metal oxides into block copolymer nanopatterns as robust etch masks for nanolithography

Cummins, Cian

Insertion of metal oxides into block copolymer nanopatterns as robust etch masks for nanolithography

cbnd

Date

2015

Authors

Cummins, Cian

Publisher

University College Cork

Abstract

Directed self-assembly (DSA) of block copolymers (BCPs) is a prime candidate to further extend dimensional scaling of silicon integrated circuit features for the nanoelectronic industry. Top-down optical techniques employed for photoresist patterning are predicted to reach an endpoint due to diffraction limits. Additionally, the prohibitive costs for “fabs” and high volume manufacturing tools are issues that have led the search for alternative complementary patterning processes. This thesis reports the fabrication of semiconductor features from nanoscale on-chip etch masks using “high χ” BCP materials. Fabrication of silicon and germanium nanofins via metal-oxide enhanced BCP on-chip etch masks that might be of importance for future Fin-field effect transistor (FinFETs) application are detailed.

Keywords

Nanotechnology , Materials science , Metal oxides , Block copolymers , Polymers , Nanolithography , Silicon , Semiconductors , Nanopatterns

Citation

Cummins, C. A. 2015. Insertion of metal oxides into block copolymer nanopatterns as robust etch masks for nanolithography. PhD Thesis, University College Cork.