Aligned silicon nanofins via the directed self-assembly of PS-b-P4VP block copolymer and metal oxide enhanced pattern transfer

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dc.contributor.author Cummins, Cian
dc.contributor.author Gangnaik, Anushka S.
dc.contributor.author Kelly, Róisín A.
dc.contributor.author Borah, Dipu
dc.contributor.author O'Connell, John
dc.contributor.author Petkov, Nikolay
dc.contributor.author Georgiev, Yordan M.
dc.contributor.author Holmes, Justin D.
dc.contributor.author Morris, Michael A.
dc.date.accessioned 2016-01-12T11:08:40Z
dc.date.available 2016-01-12T11:08:40Z
dc.date.issued 2015-03-16
dc.identifier.citation CUMMINS, C., GANGNAIK, A., KELLY, R. A., BORAH, D., O'CONNELL, J., PETKOV, N., GEORGIEV, Y. M., HOLMES, J. D. & MORRIS, M. A. 2015. Aligned silicon nanofins via the directed self-assembly of PS-b-P4VP block copolymer and metal oxide enhanced pattern transfer. Nanoscale, 7, 6712-6721. http://dx.doi.org/10.1039/C4NR07679F en
dc.identifier.volume 7 en
dc.identifier.issued 15 en
dc.identifier.startpage 6712 en
dc.identifier.endpage 6721 en
dc.identifier.issn 2040-3364
dc.identifier.uri http://hdl.handle.net/10468/2178
dc.identifier.doi 10.1039/C4NR07679F
dc.description.abstract 'Directing' block copolymer (BCP) patterns is a possible option for future semiconductor device patterning, but pattern transfer of BCP masks is somewhat hindered by the inherently low etch contrast between blocks. Here, we demonstrate a 'fab' friendly methodology for forming well-registered and aligned silicon (Si) nanofins following pattern transfer of robust metal oxide nanowire masks through the directed self-assembly (DSA) of BCPs. A cylindrical forming poly(styrene)-block-poly(4-vinyl-pyridine) (PS-b-P4VP) BCP was employed producing 'fingerprint' line patterns over macroscopic areas following solvent vapor annealing treatment. The directed assembly of PS-b-P4VP line patterns was enabled by electron-beam lithographically defined hydrogen silsequioxane (HSQ) gratings. We developed metal oxide nanowire features using PS-b-P4VP structures which facilitated high quality pattern transfer to the underlying Si substrate. This work highlights the precision at which long range ordered [similar]10 nm Si nanofin features with 32 nm pitch can be defined using a cylindrical BCP system for nanolithography application. The results show promise for future nanocircuitry fabrication to access sub-16 nm critical dimensions using cylindrical systems as surface interfaces are easier to tailor than lamellar systems. Additionally, the work helps to demonstrate the extension of these methods to a 'high [small chi]' BCP beyond the size limitations of the more well-studied PS-b-poly(methyl methylacrylate) (PS-b-PMMA) system. en
dc.description.sponsorship Science Foundation Ireland (SFI Grant number 09/IN.1/602, CSET/CRANN); European Commission (LAMAND NMP FP7) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher The Royal Society of Chemistry en
dc.rights © 2015, the Authors. This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. en
dc.rights.uri http://creativecommons.org/licenses/by/3.0/ en
dc.subject Block copolymers en
dc.subject Copolymers en
dc.subject Metallic compounds en
dc.subject Nanowires en
dc.subject Self assembly en
dc.subject Semiconductor devices en
dc.subject Styrene en
dc.subject Critical dimension en
dc.subject Directed assembly en
dc.subject Directed self-assembly en
dc.subject Hydrogen silsequioxane en
dc.subject Metal oxide nanowires en
dc.subject Pattern transfers en
dc.subject Solvent-vapor annealing en
dc.subject Surface interfaces en
dc.subject Silicon en
dc.title Aligned silicon nanofins via the directed self-assembly of PS-b-P4VP block copolymer and metal oxide enhanced pattern transfer en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Michael A. Morris, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: m.morris@ucc.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Nanoscale en
dc.internal.IRISemailaddress m.morris@ucc.ie en


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© 2015, the Authors. This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. Except where otherwise noted, this item's license is described as © 2015, the Authors. This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.
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