Organo-arsenic molecular layers on silicon for high-density doping
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Accepted Version
Date
2015-06-26
Authors
O'Connell, John
Verni, Giuseppe A.
Gangnaik, Anushka S.
Shayesteh, Maryam
Long, Brenda
Georgiev, Yordan M.
Petkov, Nikolay
McGlacken, Gerard P.
Morris, Michael A.
Duffy, Ray
Journal Title
Journal ISSN
Volume Title
Publisher
American Chemical Society
Published Version
Abstract
This article describes for the first time the controlled monolayer doping (MLD) of bulk and nanostructured crystalline silicon with As at concentrations approaching 2 x 10²⁰ atoms cm⁻³. Characterization of doped structures after the MLD process confirmed that they remained defect- and damage-free, with no indication of increased roughness or a change in morphology. Electrical characterization of the doped substrates and nanowire test structures allowed determination of resistivity, sheet resistance, and active doping levels. Extremely high As-doped Si substrates and nanowire devices could be obtained and controlled using specific capping and annealing steps. Significantly, the As-doped nanowires exhibited resistances several orders of magnitude lower than the predoped materials.
Description
Keywords
Monolayer , Doping , Shallow , High carrier concentration , Arsenic , MLD
Citation
O’CONNELL, J., VERNI, G. A., GANGNAIK, A., SHAYESTEH, M., LONG, B., GEORGIEV, Y. M., PETKOV, N., MCGLACKEN, G. P., MORRIS, M. A., DUFFY, R. & HOLMES, J. D. 2015. Organo-arsenic Molecular Layers on Silicon for High-Density Doping. ACS Applied Materials & Interfaces, 7, 15514-15521. http://dx.doi.org/10.1021/acsami.5b03768
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Copyright
This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://dx.doi.org/10.1021/acsami.5b03768