dc.contributor.author |
O'Connell, John |
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dc.contributor.author |
Verni, Giuseppe A. |
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dc.contributor.author |
Gangnaik, Anushka S. |
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dc.contributor.author |
Shayesteh, Maryam |
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dc.contributor.author |
Long, Brenda |
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dc.contributor.author |
Georgiev, Yordan M. |
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dc.contributor.author |
Petkov, Nikolay |
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dc.contributor.author |
McGlacken, Gerard P. |
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dc.contributor.author |
Morris, Michael A. |
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dc.contributor.author |
Duffy, Ray |
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dc.contributor.author |
Holmes, Justin D. |
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dc.date.accessioned |
2016-01-25T17:22:01Z |
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dc.date.available |
2016-01-25T17:22:01Z |
|
dc.date.issued |
2015-06-26 |
|
dc.identifier.citation |
O’CONNELL, J., VERNI, G. A., GANGNAIK, A., SHAYESTEH, M., LONG, B., GEORGIEV, Y. M., PETKOV, N., MCGLACKEN, G. P., MORRIS, M. A., DUFFY, R. & HOLMES, J. D. 2015. Organo-arsenic Molecular Layers on Silicon for High-Density Doping. ACS Applied Materials & Interfaces, 7, 15514-15521. http://dx.doi.org/10.1021/acsami.5b03768 |
en |
dc.identifier.volume |
7 |
en |
dc.identifier.issued |
28 |
en |
dc.identifier.startpage |
15514 |
en |
dc.identifier.endpage |
15521 |
en |
dc.identifier.issn |
1944-8244 |
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dc.identifier.uri |
http://hdl.handle.net/10468/2214 |
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dc.identifier.doi |
10.1021/acsami.5b03768 |
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dc.description.abstract |
This article describes for the first time the controlled monolayer doping (MLD) of bulk and nanostructured crystalline silicon with As at concentrations approaching 2 x 10²⁰ atoms cm⁻³. Characterization of doped structures after the MLD process confirmed that they remained defect- and damage-free, with no indication of increased roughness or a change in morphology. Electrical characterization of the doped substrates and nanowire test structures allowed determination of resistivity, sheet resistance, and active doping levels. Extremely high As-doped Si substrates and nanowire devices could be obtained and controlled using specific capping and annealing steps. Significantly, the As-doped nanowires exhibited resistances several orders of magnitude lower than the predoped materials. |
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dc.description.sponsorship |
Science Foundation Ireland (09/IN.1/I2602) |
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dc.format.mimetype |
application/pdf |
en |
dc.language.iso |
en |
en |
dc.publisher |
American Chemical Society |
en |
dc.relation.uri |
http://pubs.acs.org/doi/abs/10.1021/acsami.5b03768 |
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dc.rights |
This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://dx.doi.org/10.1021/acsami.5b03768 |
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dc.subject |
Monolayer |
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dc.subject |
Doping |
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dc.subject |
Shallow |
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dc.subject |
High carrier concentration |
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dc.subject |
Arsenic |
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dc.subject |
MLD |
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dc.title |
Organo-arsenic molecular layers on silicon for high-density doping |
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dc.type |
Article (peer-reviewed) |
en |
dc.internal.authorcontactother |
Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie |
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dc.internal.availability |
Full text available |
en |
dc.check.info |
Access to this article is restricted until 12 months after publication by the request of the publisher. |
en |
dc.check.date |
2016-06-26 |
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dc.date.updated |
2015-07-24T07:17:44Z |
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dc.description.version |
Accepted Version |
en |
dc.internal.rssid |
310846844 |
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dc.contributor.funder |
Science Foundation Ireland
|
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dc.description.status |
Peer reviewed |
en |
dc.identifier.journaltitle |
ACS Applied Materials & Interfaces |
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dc.internal.copyrightchecked |
No !!CORA- Sherpa Romeo and ACS JPA user guide (2015). Accepted Version permitted with 12 month embargo and set statement required.!! |
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dc.internal.licenseacceptance |
Yes |
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dc.internal.IRISemailaddress |
j.holmes@ucc.ie |
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dc.internal.IRISemailaddress |
brenda.long@ucc.ie |
en |