Organo-arsenic molecular layers on silicon for high-density doping

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dc.contributor.author O'Connell, John
dc.contributor.author Verni, Giuseppe A.
dc.contributor.author Gangnaik, Anushka S.
dc.contributor.author Shayesteh, Maryam
dc.contributor.author Long, Brenda
dc.contributor.author Georgiev, Yordan M.
dc.contributor.author Petkov, Nikolay
dc.contributor.author McGlacken, Gerard P.
dc.contributor.author Morris, Michael A.
dc.contributor.author Duffy, Ray
dc.contributor.author Holmes, Justin D.
dc.date.accessioned 2016-01-25T17:22:01Z
dc.date.available 2016-01-25T17:22:01Z
dc.date.issued 2015-06-26
dc.identifier.citation O’CONNELL, J., VERNI, G. A., GANGNAIK, A., SHAYESTEH, M., LONG, B., GEORGIEV, Y. M., PETKOV, N., MCGLACKEN, G. P., MORRIS, M. A., DUFFY, R. & HOLMES, J. D. 2015. Organo-arsenic Molecular Layers on Silicon for High-Density Doping. ACS Applied Materials & Interfaces, 7, 15514-15521. http://dx.doi.org/10.1021/acsami.5b03768 en
dc.identifier.volume 7 en
dc.identifier.issued 28 en
dc.identifier.startpage 15514 en
dc.identifier.endpage 15521 en
dc.identifier.issn 1944-8244
dc.identifier.uri http://hdl.handle.net/10468/2214
dc.identifier.doi 10.1021/acsami.5b03768
dc.description.abstract This article describes for the first time the controlled monolayer doping (MLD) of bulk and nanostructured crystalline silicon with As at concentrations approaching 2 x 10²⁰ atoms cm⁻³. Characterization of doped structures after the MLD process confirmed that they remained defect- and damage-free, with no indication of increased roughness or a change in morphology. Electrical characterization of the doped substrates and nanowire test structures allowed determination of resistivity, sheet resistance, and active doping levels. Extremely high As-doped Si substrates and nanowire devices could be obtained and controlled using specific capping and annealing steps. Significantly, the As-doped nanowires exhibited resistances several orders of magnitude lower than the predoped materials. en
dc.description.sponsorship Science Foundation Ireland (09/IN.1/I2602) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society en
dc.relation.uri http://pubs.acs.org/doi/abs/10.1021/acsami.5b03768
dc.rights This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://dx.doi.org/10.1021/acsami.5b03768 en
dc.subject Monolayer en
dc.subject Doping en
dc.subject Shallow en
dc.subject High carrier concentration en
dc.subject Arsenic en
dc.subject MLD en
dc.title Organo-arsenic molecular layers on silicon for high-density doping en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 12 months after publication by the request of the publisher. en
dc.check.date 2016-06-26
dc.date.updated 2015-07-24T07:17:44Z
dc.description.version Accepted Version en
dc.internal.rssid 310846844
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle ACS Applied Materials & Interfaces en
dc.internal.copyrightchecked No !!CORA- Sherpa Romeo and ACS JPA user guide (2015). Accepted Version permitted with 12 month embargo and set statement required.!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.internal.IRISemailaddress brenda.long@ucc.ie en


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