In operandi observation of dynamic annealing: a case study of boron in germanium nanowire devices

Koleśnik-Gray, Maria M.; Sorger, Christian; Biswas, Subhajit; Holmes, Justin D.; Weber, Heiko B.; Krstić, Vojislav

In operandi observation of dynamic annealing: a case study of boron in germanium nanowire devices

Files

APL_15-106-233109(1).pdf(1.92 MB)

Published Version

Date

2015-06-11

Authors

Koleśnik-Gray, Maria M.

Sorger, Christian

Biswas, Subhajit

Holmes, Justin D.

Weber, Heiko B.

Krstić, Vojislav

Publisher

AIP Publishing

Published Version

10.1063/1.4922527

Abstract

We report on the implantation of boron in individual, electrically contacted germanium nanowires with varying diameter and present a technique that monitors the electrical properties of a single device during implantation of ions. This method gives improved access to study the dynamic annealing ability of the nanowire at room temperature promoted by its quasi-one-dimensional confinement. Based on electrical data, we find that the dopant activation efficiency is nontrivially diameter dependent. As the diameter decreases, a transition from a pronounced dynamic-annealing to a radiation-damage dominated regime is observed.

Keywords

Field-effect transistors , Electrical transport , Ion implantation , Silicon , Growth , Semiconductors , Morphology , Dopant , Annealing , Boron , Germanium , Diameter dependent , Dopant activation , Dynamic annealing , Electrical data , Germanium nanowires , Quasi-one dimensional , Room temperature

Citation

KOLEŚNIK-GRAY, M. M., SORGER, C., BISWAS, S., HOLMES, J. D., WEBER, H. B. & KRSTIĆ, V. 2015. In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices. Applied Physics Letters, 106:233109, 1-4. http://scitation.aip.org/content/aip/journal/apl/106/23/10.1063/1.4922527