In operandi observation of dynamic annealing: a case study of boron in germanium nanowire devices

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dc.contributor.authorKoleśnik-Gray, Maria M.
dc.contributor.authorSorger, Christian
dc.contributor.authorBiswas, Subhajit
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorWeber, Heiko B.
dc.contributor.authorKrstić, Vojislav
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2016-01-26T16:42:54Z
dc.date.available2016-01-26T16:42:54Z
dc.date.issued2015-06-11
dc.date.updated2015-06-12T11:57:14Z
dc.description.abstractWe report on the implantation of boron in individual, electrically contacted germanium nanowires with varying diameter and present a technique that monitors the electrical properties of a single device during implantation of ions. This method gives improved access to study the dynamic annealing ability of the nanowire at room temperature promoted by its quasi-one-dimensional confinement. Based on electrical data, we find that the dopant activation efficiency is nontrivially diameter dependent. As the diameter decreases, a transition from a pronounced dynamic-annealing to a radiation-damage dominated regime is observed.en
dc.description.sponsorshipScience Foundation Ireland (PI Award 08/IN.1/I1873 and CSET 08/CE/I1432)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid233109
dc.identifier.citationKOLEŚNIK-GRAY, M. M., SORGER, C., BISWAS, S., HOLMES, J. D., WEBER, H. B. & KRSTIĆ, V. 2015. In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices. Applied Physics Letters, 106:233109, 1-4. http://scitation.aip.org/content/aip/journal/apl/106/23/10.1063/1.4922527en
dc.identifier.doi10.1063/1.4922527
dc.identifier.endpage233109(4)en
dc.identifier.issn0003-6951
dc.identifier.issued23en
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage233109(1)en
dc.identifier.urihttps://hdl.handle.net/10468/2219
dc.identifier.volume106en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rights© 2015, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in Journal of Applied Physics 106: 233109 (2015) and may be found at http://scitation.aip.org/content/aip/journal/apl/106/23/10.1063/1.4922527en
dc.rights.urihttp://publishing.aip.org/authors/copyright-reuseen
dc.subjectField-effect transistorsen
dc.subjectElectrical transporten
dc.subjectIon implantationen
dc.subjectSiliconen
dc.subjectGrowthen
dc.subjectSemiconductorsen
dc.subjectMorphologyen
dc.subjectDopanten
dc.subjectAnnealingen
dc.subjectBoronen
dc.subjectGermaniumen
dc.subjectDiameter dependenten
dc.subjectDopant activationen
dc.subjectDynamic annealingen
dc.subjectElectrical dataen
dc.subjectGermanium nanowiresen
dc.subjectQuasi-one dimensionalen
dc.subjectRoom temperatureen
dc.titleIn operandi observation of dynamic annealing: a case study of boron in germanium nanowire devicesen
dc.typeArticle (peer-reviewed)en
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