In operandi observation of dynamic annealing: a case study of boron in germanium nanowire devices
Koleśnik-Gray, Maria M.
Holmes, Justin D.
Weber, Heiko B.
We report on the implantation of boron in individual, electrically contacted germanium nanowires with varying diameter and present a technique that monitors the electrical properties of a single device during implantation of ions. This method gives improved access to study the dynamic annealing ability of the nanowire at room temperature promoted by its quasi-one-dimensional confinement. Based on electrical data, we find that the dopant activation efficiency is nontrivially diameter dependent. As the diameter decreases, a transition from a pronounced dynamic-annealing to a radiation-damage dominated regime is observed.
Field-effect transistors , Electrical transport , Ion implantation , Silicon , Growth , Semiconductors , Morphology , Dopant , Annealing , Boron , Germanium , Diameter dependent , Dopant activation , Dynamic annealing , Electrical data , Germanium nanowires , Quasi-one dimensional , Room temperature
KOLEŚNIK-GRAY, M. M., SORGER, C., BISWAS, S., HOLMES, J. D., WEBER, H. B. & KRSTIĆ, V. 2015. In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices. Applied Physics Letters, 106:233109, 1-4. http://scitation.aip.org/content/aip/journal/apl/106/23/10.1063/1.4922527
© 2015, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in Journal of Applied Physics 106: 233109 (2015) and may be found at http://scitation.aip.org/content/aip/journal/apl/106/23/10.1063/1.4922527