In operandi observation of dynamic annealing: a case study of boron in germanium nanowire devices

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Koleśnik-Gray, Maria M.
Sorger, Christian
Biswas, Subhajit
Holmes, Justin D.
Weber, Heiko B.
Krstić, Vojislav
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We report on the implantation of boron in individual, electrically contacted germanium nanowires with varying diameter and present a technique that monitors the electrical properties of a single device during implantation of ions. This method gives improved access to study the dynamic annealing ability of the nanowire at room temperature promoted by its quasi-one-dimensional confinement. Based on electrical data, we find that the dopant activation efficiency is nontrivially diameter dependent. As the diameter decreases, a transition from a pronounced dynamic-annealing to a radiation-damage dominated regime is observed.
Field-effect transistors , Electrical transport , Ion implantation , Silicon , Growth , Semiconductors , Morphology , Dopant , Annealing , Boron , Germanium , Diameter dependent , Dopant activation , Dynamic annealing , Electrical data , Germanium nanowires , Quasi-one dimensional , Room temperature
KOLEŚNIK-GRAY, M. M., SORGER, C., BISWAS, S., HOLMES, J. D., WEBER, H. B. & KRSTIĆ, V. 2015. In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices. Applied Physics Letters, 106:233109, 1-4.
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