Atomic-scale simulation of ALD chemistry

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Date
2012-06-22
Authors
Elliott, Simon D.
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Publisher
IOP Science
Published Version
10.1088/0268-1242/27/7/074008
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Abstract
Published papers on atomic-scale simulation of the atomic layer deposition (ALD) process are reviewed. The main topic is reaction mechanism, considering the elementary steps of precursor adsorption, ligand elimination and film densification, as well as reactions with substrates (particularly Si and SiO2) and CVD-like decomposition at the surface. Density functional theory is the first principles method generally applied to these mechanistic questions. The most popular subject for modelling is the ALD of oxides and nitrides, particularly the high-k dielectrics HfO2, ZrO2 and Al2O3, due to their importance in semiconductor processing.
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Keywords
Elementary steps , First principles method , High-k dielectric , Precursor adsorption , Reaction mechanism , Semiconductor processing
Citation
ELLIOTT, S. E. 2012. Atomic-scale simulation of ALD chemistry. Semiconductor Science and Technology, 27, 074008. http://dx.doi.org/10.1088/0268-1242/27/7/074008
Link to publisher’s version
http://stacks.iop.org/0268-1242/27/i=7/a=074008
URI
https://hdl.handle.net/10468/2478
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Tyndall National Institute - Journal Articles
Copyright
© 2012 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/0268-1242/27/7/074008