Characterization of resistivity of Sb2S3 semiconductor nanowires by conductive AFM and in-situ methods

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dc.contributor.author Bukins, J.
dc.contributor.author Kunakova, Gunta
dc.contributor.author Birjukovs, P.
dc.contributor.author Prikulis, Juris
dc.contributor.author Varghese, Justin M.
dc.contributor.author Holmes, Justin D.
dc.contributor.author Erts, Donats
dc.contributor.editor Medvids, Arturs
dc.date.accessioned 2016-05-30T11:42:08Z
dc.date.available 2016-05-30T11:42:08Z
dc.date.issued 2011-04
dc.identifier.citation Bukins, J., Kunakova, G., Birjukovs, P., Prikulis, J., Varghese, J., Holmes, J.D. and Erts, D. (2011), ‘Characterization of Resistivity of Sb2S3 Semiconductor Nanowires by Conductive AFM and In Situ Methods’, Advanced Materials Research, Vol. 222, pp. 106-109, doi: 10.4028/www.scientific.net/AMR.222.106 en
dc.identifier.volume 222 en
dc.identifier.startpage 106 en
dc.identifier.endpage 109 en
dc.identifier.issn 1662-8985
dc.identifier.uri http://hdl.handle.net/10468/2648
dc.identifier.doi 10.4028/www.scientific.net/AMR.222.106
dc.description.abstract Conductive AFM and in situ methods were used to determine contact resistance and resistivity of individual Sb2S3 nanowires. Nanowires were deposited on oxidized Si surface for in situ measurements and on Si surface with macroelectrodes for conductive AFM (C-AFM) measurements. Contact resistance was determined by measurement of I(V) characteristics at different distances from the nanowire contact with the macroelectrode and resistivity of nanowires was determined. Sb2S3 is a soft material with low adhesion force to the surface and therefore special precautions were taken during measurements. en
dc.description.uri http://www.scientific.net/AMR.222 en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Trans Tech Publications en
dc.relation.ispartof Advanced Materials Research
dc.relation.uri www.scientific.net
dc.rights © (2011) Trans Tech Publications, Switzerland. All rights reserved. No part of contents of this paper may be reproduced or transmitted in any form or by any means without the written permission of TTP, www.ttp.net. (ID: 143.239.220.93-01/04/11,17:39:24) en
dc.subject Conductive AFM en
dc.subject Nanowires en
dc.subject Resistivity en
dc.subject Sb2S3 en
dc.subject Semiconductor nanowire en
dc.title Characterization of resistivity of Sb2S3 semiconductor nanowires by conductive AFM and in-situ methods en
dc.type Conference item en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2013-03-07T22:01:20Z
dc.description.version Published Version en
dc.internal.rssid 73897462
dc.description.status Peer reviewed en
dc.identifier.journaltitle Advanced Materials Research en
dc.internal.copyrightchecked No. !!CORA!! Yes en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en


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