Characterization of resistivity of Sb2S3 semiconductor nanowires by conductive AFM and in-situ methods

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dc.contributor.authorBukins, J.
dc.contributor.authorKunakova, Gunta
dc.contributor.authorBirjukovs, P.
dc.contributor.authorPrikulis, Juris
dc.contributor.authorVarghese, Justin M.
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorErts, Donats
dc.contributor.editorMedvids, Arturs
dc.date.accessioned2016-05-30T11:42:08Z
dc.date.available2016-05-30T11:42:08Z
dc.date.issued2011-04
dc.date.updated2013-03-07T22:01:20Z
dc.description.abstractConductive AFM and in situ methods were used to determine contact resistance and resistivity of individual Sb2S3 nanowires. Nanowires were deposited on oxidized Si surface for in situ measurements and on Si surface with macroelectrodes for conductive AFM (C-AFM) measurements. Contact resistance was determined by measurement of I(V) characteristics at different distances from the nanowire contact with the macroelectrode and resistivity of nanowires was determined. Sb2S3 is a soft material with low adhesion force to the surface and therefore special precautions were taken during measurements.en
dc.description.statusPeer revieweden
dc.description.urihttp://www.scientific.net/AMR.222en
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBukins, J., Kunakova, G., Birjukovs, P., Prikulis, J., Varghese, J., Holmes, J.D. and Erts, D. (2011), ‘Characterization of Resistivity of Sb2S3 Semiconductor Nanowires by Conductive AFM and In Situ Methods’, Advanced Materials Research, Vol. 222, pp. 106-109, doi: 10.4028/www.scientific.net/AMR.222.106en
dc.identifier.doi10.4028/www.scientific.net/AMR.222.106
dc.identifier.endpage109en
dc.identifier.issn1662-8985
dc.identifier.journaltitleAdvanced Materials Researchen
dc.identifier.startpage106en
dc.identifier.urihttps://hdl.handle.net/10468/2648
dc.identifier.volume222en
dc.language.isoenen
dc.publisherTrans Tech Publicationsen
dc.relation.ispartofAdvanced Materials Research
dc.relation.uriwww.scientific.net
dc.rights© (2011) Trans Tech Publications, Switzerland. All rights reserved. No part of contents of this paper may be reproduced or transmitted in any form or by any means without the written permission of TTP, www.ttp.net. (ID: 143.239.220.93-01/04/11,17:39:24)en
dc.subjectConductive AFMen
dc.subjectNanowiresen
dc.subjectResistivityen
dc.subjectSb2S3en
dc.subjectSemiconductor nanowireen
dc.titleCharacterization of resistivity of Sb2S3 semiconductor nanowires by conductive AFM and in-situ methodsen
dc.typeConference itemen
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