Growth and characterization of anodic Films on InP in KOH and (NH4)2S

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Date
2001-03
Authors
Harvey, E.
O'Dwyer, Colm
Melly, T.
Buckley, D. Noel
Cunnane, V. J.
Sutton, David
Newcomb, Simon B.
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Electrochemical Society
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Abstract
The current-voltage characteristics of InP were investigated in (NH4)2S and KOH electrolytes. In both solutions, the observation of current peaks in the cyclic voltammetric curves was attributed to the growth of passivating films. The relationship between the peak currents and the scan rates suggests that the film formation process is diffusion controlled in both cases. The film thickness required to inhibit current flow was found to be much lower on samples anodized in the sulphide solution. Focused ion beam (FIB) secondary electron images of the surface films show that film cracking of the type reported previously for films grown in (NH4)2S is also observed for films grown in KOH. X-ray and electron diffraction measurements indicate the presence of In2O3 and InPO4 in films grown in KOH and In2S3 in films grown in (NH4)2S.
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Keywords
Porous InP , KOH electrolytes , Anodic formation
Citation
Harvey, E., O’Dwyer, C., Melly, T., Buckley, D. N., Cunnane, V. J., Sutton, D. and Newcomb, S. B. (2001) 'Growth and Characterization of Anodic Films on InP in KOH and (NH4)2S', III-Nitride Based Semiconductor Electronic and Optical Devices and State-of-the-Art Program on Compound Semiconductors XXXIV, 199th ECS Meeting, Washington, D.C., 25-30 March. in Proceedings - Electrochemical Society, Vol. 1, p. 204-212. ISBN 1-56677-306-5.
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© 2001, Electrochemical Society