Pitting and porous layer formation on n-InP anodes

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dc.contributor.author O'Dwyer, Colm
dc.contributor.author Buckley, D. Noel
dc.contributor.author Serantoni, M.
dc.contributor.author Sutton, David
dc.contributor.author Newcomb, Simon B.
dc.date.accessioned 2016-07-14T14:31:48Z
dc.date.available 2016-07-14T14:31:48Z
dc.date.issued 2003-10
dc.identifier.citation O'Dwyer, C., Buckley, D. N., Serantoni, M., Sutton, D. and Newcomb, S. B. (2003) 'Pitting and Porous Layer Formation on n-InP Anodes', State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the International Symposium; Orlando,FL; United States; 12-17 October, in Proceedings - Electrochemical Society, Vol. 11, pp. 136-151. ISBN 1-56677-391-1 en
dc.identifier.volume 11 en
dc.identifier.startpage 136 en
dc.identifier.endpage 151 en
dc.identifier.isbn 1-56677-391-1
dc.identifier.uri http://hdl.handle.net/10468/2878
dc.description.abstract Surface pitting occurs when InP electrodes are anodized in KOH electrolytes at concentrations in the range 2 - 5 mol dm-3. The process has been investigated using atomic force microscopy (AFM) and the results correlated with cross-sectional transmission electron microscopy (TEM) and electroanalytical measurements. AFM measurements show that pitting of the surface occurs and the density of pits is observed to increase with time under both potentiodynamic and potentiostatic conditions. This indicates a progressive pit nucleation process and implies that the development of porous domains beneath the surface is also progressive in nature. Evidence for this is seen in plan view TEM images in which individual domains are seen to be at different stages of development. Analysis of the cyclic voltammograms of InP electrodes in 5 mol dm-3 KOH indicates that, above a critical potential for pit formation, the anodic current is predominantly time dependent and there is little differential dependence of the current on potential. Thus, pores continue to grow with time when the potential is high enough to maintain depletion layer breakdown conditions. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Electrochemical Society en
dc.relation.uri http://ecsdl.org/site/misc/proceedings_volumes.xhtml
dc.rights © 2003, Electrochemical Society en
dc.subject Atomic force microscopy en
dc.subject Cyclic voltammetry en
dc.subject Porous materials en
dc.subject Silicon en
dc.subject Transmission electron microscopy en
dc.subject Cyclic voltammograms en
dc.subject Photonic crystals en
dc.subject Pit formation en
dc.subject Porous layer formation en
dc.title Pitting and porous layer formation on n-InP anodes en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: c.odwyer@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2012-11-30T12:12:34Z
dc.description.version Accepted Version en
dc.internal.rssid 162343079
dc.description.status Peer reviewed en
dc.identifier.journaltitle Proceedings - Electrochemical Society en
dc.internal.copyrightchecked No. !!CORA!! Yes en
dc.internal.licenseacceptance Yes en
dc.internal.conferencelocation Orlando, Florida en
dc.internal.IRISemailaddress c.odwyer@ucc.ie en


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