Isolating the photovoltaic junction: atomic layer deposited TiO2-RuO2 alloy Schottky contacts for silicon photoanodes

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Date
2016-08-22
Authors
Hendricks, Olivia L.
Scheuermann, Andrew G.
Schmidt, Michael
Hurley, Paul K.
McIntyre, Paul C.
Chidsey, Christopher E. D.
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American Chemical Society
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Abstract
We synthesized nanoscale TiO2-RuO2 alloys by atomic layer deposition (ALD) that possess a high work function and are highly conductive. As such, they function as good Schottky contacts to extract photogenerated holes from n-type silicon while simultaneously interfacing with water oxidation catalysts. The ratio of TiO2 to RuO2 can be precisely controlled by the number of ALD cycles for each precursor. Increasing the composition above 16% Ru sets the electronic conductivity and the metal work function. No significant Ohmic loss for hole transport is measured as film thickness increases from 3 to 45 nm for alloy compositions >= 16% Ru. Silicon photoanodes with a 2 nm SiO2 layer that are coated by these alloy Schottky contacts having compositions in the range of 13-46% Ru exhibit average photovoltages of 525 mV, with a maximum photovoltage of 570 mV achieved. Depositing TiO2-RuO2 alloys on nSi sets a high effective work function for the Schottky junction with the semiconductor substrate, thus generating a large photovoltage that is isolated from the properties of an overlying oxygen evolution catalyst or protection layer.
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Ruthenium thin-films , Open-circuit voltage , MIS solar-cells , Water oxidation , Oxygen , Oxide , Performance , Electrocatalysis , Photocatalysis , Electrodes
Citation
Hendricks, Olivia L.; Scheuermann, Andrew G.; Schmidt, Michael; Hurley, Paul K.; McIntyre, Paul C.; Chidsey, Christopher E. D. (2016) 'Isolating the Photovoltaic Junction: Atomic Layer Deposited TiO2-RuO2 Alloy Schottky Contacts for Silicon Photoanodes'. ACS Applied Materials & Interfaces, 8 (36):23763-23773. doi: 10.1021/acsami.6b08558
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Copyright © 2016 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in American Chemical Society Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsami.6b08558