The nature of silicon nanowire roughness and thermal conductivity suppression by phonon scattering mechanisms

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dc.contributor.author Glynn, Colm
dc.contributor.author Jones, Kim-Marie
dc.contributor.author Mogili, Vishnu
dc.contributor.author McSweeney, William
dc.contributor.author O'Dwyer, Colm
dc.date.accessioned 2017-01-23T15:26:15Z
dc.date.available 2017-01-23T15:26:15Z
dc.date.issued 2017-01-10
dc.identifier.citation Glynn, C., Jones, K.-M., Mogili, V., McSweeney, W. and O'Dwyer, C. (2017) 'The Nature of Silicon Nanowire Roughness and Thermal Conductivity Suppression by Phonon Scattering Mechanisms', ECS Journal of Solid State Science and Technology, 6(3), pp. N3029-N3035. doi:10.1149/2.0071703jss en
dc.identifier.volume 6 en
dc.identifier.issued 3 en
dc.identifier.startpage N3029 en
dc.identifier.endpage N3035 en
dc.identifier.issn 2162-8769
dc.identifier.uri http://hdl.handle.net/10468/3504
dc.identifier.doi 10.1149/2.0071703jss
dc.description.abstract The nature of the surface roughness of electrolessly etched p-type Si nanowires (NWs) is examined using high resolution transmission electron microscopy and shown to comprise individual silicon nanocrystallites throughout the waviness of the roughness features. As the frequency of roughness features are believed to be sources of surface and boundary scattering, the thermal conductivity below the Casimir limit is still not fully explained. The frequency shift and development of asymmetry in the optical phonon mode in silicon was monitored by Raman scattering measurements as a function of temperature (>1000 K). We assessed the influence of Si NW roughness features on phonon scattering mechanisms including quantum confinement of phonons from roughness nanocrystals, boundary scattering, and optical phonon decay to interacting 3- and 4-phonon processes that may contribute to the cause of significant thermal conductivity suppression in rough Si nanowires. High temperature studies and detailed examination of the substrate of roughness revealed high frequency optical phonon contributions to thermal conductivity suppression. en
dc.description.sponsorship Irish Research Council (Award RS/2011/797); Science Foundation Ireland (SFI under the National Access Programme (NAP 417), and through SFI Technology Innovation and Development Awards 2015 under contract 15/TIDA/2893) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Electrochemical Society en
dc.rights © The Author(s) 2017. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. [DOI: 10.1149/2.0071703jss] All rights reserved. en
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/4.0/ en
dc.subject Nanostructure en
dc.subject Nanowire en
dc.subject Raman en
dc.subject Silicon en
dc.subject Thermoelectric en
dc.title The nature of silicon nanowire roughness and thermal conductivity suppression by phonon scattering mechanisms en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: c.odwyer@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2017-01-23T15:11:02Z
dc.description.version Published Version en
dc.internal.rssid 379091587
dc.contributor.funder Irish Research Council en
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle ECS Journal of Solid State Science and Technology en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress c.odwyer@ucc.ie en


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© The Author(s) 2017. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. [DOI: 10.1149/2.0071703jss] All rights reserved. Except where otherwise noted, this item's license is described as © The Author(s) 2017. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. [DOI: 10.1149/2.0071703jss] All rights reserved.
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