Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells

Show simple item record

dc.contributor.author Schulz, Stefan
dc.contributor.author Tanner, Daniel S. P.
dc.contributor.author O'Reilly, Eoin P.
dc.contributor.author Caro, Miguel A.
dc.contributor.author Tang, F.
dc.contributor.author Griffiths, J. T.
dc.contributor.author Oehler, F.
dc.contributor.author Kappers, M. J.
dc.contributor.author Oliver, R. A.
dc.contributor.author Humphreys, C. J.
dc.contributor.author Sutherland, D.
dc.contributor.author Davies, M. J.
dc.contributor.author Dawson, Philip
dc.date.accessioned 2017-02-02T12:18:32Z
dc.date.available 2017-02-02T12:18:32Z
dc.date.issued 2016-11-28
dc.identifier.citation Schulz, S., Tanner, D. S. P., O'Reilly, E. P., Caro, M. A., Tang, F., Griffiths, J. T., Oehler, F., Kappers, M. J., Oliver, R. A., Humphreys, C. J., Sutherland, D., Davies, M. J. and Dawson, P. (2016) 'Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells', Applied Physics Letters, 109(22), pp. 223102. doi:10.1063/1.4968591 en
dc.identifier.volume 109 en
dc.identifier.issued 22 en
dc.identifier.startpage 223102-1 en
dc.identifier.endpage 223102-4 en
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10468/3553
dc.identifier.doi 10.1063/1.4968591
dc.description.abstract We present a combined theoretical and experimental analysis of the optical properties of m-plane InGaN/GaN quantum wells. The sample was studied by photoluminescence and photoluminescence excitation spectroscopy at low temperature. The spectra show a large Stokes shift between the lowest exciton peak in the excitation spectra and the peak of the photoluminescence spectrum. This behavior is indicative of strong carrier localization effects. These experimental results are complemented by tight-binding calculations, accounting for random alloy fluctuations and Coulomb effects. The theoretical data explain the main features of the experimental spectra. Moreover, by comparison with calculations based on a virtual crystal approximation, the importance of carrier localization effects due to random alloy fluctuations is explicitly shown. en
dc.description.sponsorship Science Foundation Ireland (SFI Project No. 13/SIRG/2210); United Kingdom Engineering and Physical Sciences Research Council (Grant Agreement Nos. EP\J001627\1 and EP\J003603\1). en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.rights © 2016, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters 109, 223102 (2016) and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4968591 en
dc.subject Gallium compounds en
dc.subject III-V semiconductors en
dc.subject Indium compounds en
dc.subject Localised states en
dc.subject Photoluminescence en
dc.subject Semiconductor quantum wells en
dc.subject Tight-binding calculations en
dc.subject Wide band gap semiconductors en
dc.subject Excitons en
dc.subject Localization effects en
dc.subject Visible spectra en
dc.title Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Eoin O'Reilly, Physics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: eoin.oreilly@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2017-02-02T12:04:40Z
dc.description.version Published Version en
dc.internal.rssid 382018813
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Engineering and Physical Sciences Research Council en
dc.contributor.funder European Research Council en
dc.contributor.funder Seventh Framework Programme en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.copyrightchecked No !!CORA!! en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress eoin.oreilly@tyndall.ie en
dc.identifier.articleid 223102
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP2::ERC/279361/EU/A multi-microscopy approach to the characterisation of Nitride semiconductors (MACONS)/MACONS en


Files in this item

This item appears in the following Collection(s)

Show simple item record

This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement