Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser
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Published Version
Date
2017-02-06
Authors
Yan, Xin
Wei, Wei
Tang, Fengling
Wang, Xi
Li, Luying
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Publisher
AIP Publishing
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Abstract
Near-infrared nanowire lasers are promising as ultrasmall, low-consumption light emitters in on-chip optical communications and computing systems. Here, we report on a room-temperature near-infrared nanolaser based on an AlGaAs/GaAs nanowire/single-quantum-well heterostructure grown by Au-catalyzed metal organic chemical vapor deposition. When subjects to pulsed optical excitation, the nanowire exhibits lasing, with a low threshold of 600 W/cm2, a narrow linewidth of 0.39 nm, and a high Q factor of 2000 at low temperature. Lasing is observed up to 300 K, with an ultrasmall temperature dependent wavelength shift of 0.045 nm/K. This work paves the way towards ultrasmall, low-consumption, and high-temperature-stability near-infrared nanolasers.
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Keywords
Aluminium compounds , Gallium arsenide , III-V semiconductors , MOCVD , Nanophotonics , Nanowires , Q-factor , Quantum well lasers , Semiconductor heterojunctions , Quantum wells , Linewidths , Scanning electron microscopy , Heterojunctions , Photoluminescence
Citation
Yan, X., Wei, W., Tang, F., Wang, X., Li, L., Zhang, X. and Ren, X. (2017) 'Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser', Applied Physics Letters, 110(6), pp. 061104. doi: 10.1063/1.4975780
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© 2017, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Appl. Phys. Lett. 110, 061104 (2017) and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4975780