Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser

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dc.contributor.author Yan, Xin
dc.contributor.author Wei, Wei
dc.contributor.author Tang, Fengling
dc.contributor.author Wang, Xi
dc.contributor.author Li, Luying
dc.date.accessioned 2017-02-13T14:27:07Z
dc.date.available 2017-02-13T14:27:07Z
dc.date.issued 2017-02-06
dc.identifier.citation Yan, X., Wei, W., Tang, F., Wang, X., Li, L., Zhang, X. and Ren, X. (2017) 'Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser', Applied Physics Letters, 110(6), pp. 061104. doi: 10.1063/1.4975780 en
dc.identifier.volume 110 en
dc.identifier.startpage 061104-1 en
dc.identifier.endpage 061104-5 en
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10468/3621
dc.identifier.doi 10.1063/1.4975780
dc.description.abstract Near-infrared nanowire lasers are promising as ultrasmall, low-consumption light emitters in on-chip optical communications and computing systems. Here, we report on a room-temperature near-infrared nanolaser based on an AlGaAs/GaAs nanowire/single-quantum-well heterostructure grown by Au-catalyzed metal organic chemical vapor deposition. When subjects to pulsed optical excitation, the nanowire exhibits lasing, with a low threshold of 600 W/cm2, a narrow linewidth of 0.39 nm, and a high Q factor of 2000 at low temperature. Lasing is observed up to 300 K, with an ultrasmall temperature dependent wavelength shift of 0.045 nm/K. This work paves the way towards ultrasmall, low-consumption, and high-temperature-stability near-infrared nanolasers. en
dc.description.sponsorship National Natural Science Foundation of China (61504010, 61376019, and 61511130045); Air Force Office of Scientific Research (European Office of Aerospace Research and Development (FA9550-14-1-0204)); Science Foundation Ireland (12/IP/1658), Beijing Natural Science Foundation (4142038); Beijing University of Posts and Telecommunications (the Fund of State Key Laboratory of Information Photonics and Optical Communications); Ministry of Industry and Information Technology of the People's Republic of China en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.rights © 2017, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Appl. Phys. Lett. 110, 061104 (2017) and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4975780 en
dc.subject Aluminium compounds en
dc.subject Gallium arsenide en
dc.subject III-V semiconductors en
dc.subject MOCVD en
dc.subject Nanophotonics en
dc.subject Nanowires en
dc.subject Q-factor en
dc.subject Quantum well lasers en
dc.subject Semiconductor heterojunctions en
dc.subject Quantum wells en
dc.subject Linewidths en
dc.subject Scanning electron microscopy en
dc.subject Heterojunctions en
dc.subject Photoluminescence en
dc.title Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Wei Wei, Physics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: wei.wei@ucc.ie en
dc.internal.availability Full text available en
dc.check.info Access to this item is restricted until 12 months after publication by the request of the publisher. en
dc.check.date 2018-02-06
dc.description.version Published Version en
dc.contributor.funder National Natural Science Foundation of China en
dc.contributor.funder Air Force Office of Scientific Research en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Beijing Municipal Natural Science Foundation en
dc.contributor.funder Beijing University of Posts and Telecommunications en
dc.contributor.funder Ministry of Industry and Information Technology of the People's Republic of China en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.copyrightchecked !!CORA!! en
dc.internal.IRISemailaddress wei.wei@ucc.ie en


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